Speaker
Andreas Matthias Nurnberg
(KIT - Karlsruhe Institute of Technology (DE))
Description
In the CMS campaign to find the new baseline material for the next tracker, irradiated p-on-n sensors showed a non-gaussian noise behaviour. The effect has been quantified and studied systematically as a function of the applied bias voltage and sensor annealing, as well as irradiation fluence, particle type and energy and sensor geometry. In some operation area, this effect would lead to an noise occupancy of the sensor of over 10%, which makes this p-on-n sensors unuseful as a tracking device. The dependence on the sensor geometry (strip pitch and w/p ratio) indicates, that a high electric field at the strip side promotes the effect. T-CAD simulations of irradiated strip sensors showed an intrinsically higher electric field at the front side of p-on-n sensors compared to n-on-p sensors, thus making the occurence of the effect more likely in p-on-n sensors.
Author
Andreas Matthias Nurnberg
(KIT - Karlsruhe Institute of Technology (DE))
Co-authors
Alexander Dierlamm
(KIT - Karlsruhe Institute of Technology (DE))
Prof.
Thomas Muller
(KIT - Karlsruhe Institute of Technology (DE))
Volker Heine
(KIT)
Wim De Boer
(KIT - Karlsruhe Institute of Technology (DE))
