23rd RD50 Workshop (CERN)

Update on the temperature dependence of the bulk current in Si (remote)

14 Nov 2013, 16:05

20m

CERN

Device Simulations and some key experimental data

Speaker

Alexandre Chilingarov (Lancaster University (GB))

Description

New data on the temperature dependence of the current generated in Si bulk are presented. Modification of the test set-up allowed measurements with the sensor irradiated by 1E+16 neq per square cm.

Presentation materials

Slides

AChRD50CERN2013.pdf

AChRD50CERN2013.ppt