Conveners
Device Simulations and some key experimental data
- Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)
Dr
Fco. Rogelio Palomo Pinto
(School of Engineering University of Sevilla)
14/11/2013, 13:35
We present a compendium of our latest works about simulation of radiation effects in electronics using Sentaurus TCAD. Adapting the tool, we simulate pulsed laser ionization effects, ion tracks, total ionization dose and displacement damage.
Dr
Fco. Rogelio Palomo Pinto
(School of Engineering University of Sevilla)
14/11/2013, 13:55
We present our SEE circuital simulation tool. It leverages from the Cadence design suite, makes automatic placement of SEE sources and uses heuristics to determine circuit sensitivities.
Thomas Poehlsen
(University of Hamburg)
14/11/2013, 14:15
Standard (20 min including discussion)
The Si-SO2 interface region in a DC-coupled p+n-silicon strip sensors has been studied by TCT measurements for eh-pairs produced by focused, sub-nanosecond laser light with wavelengths of 660 nm and 830 nm. Charge losses of either electrons or holes have been observed. The charge losses depend on the biasing history; after changing the sensor voltage, they change, with time constants between...
Ranjeet Ranjeet
(University of Delhi (IN))
14/11/2013, 14:35
The future upgrade of LHC to the SLHC, with the goal for over an order of magnitude higher luminosity (> 1035 cm -2 s -1) and over 4 times more integrated luminosity (3000fb-1) have posed challenges to develop the extreme radiation hard Si sensors. To address the problem, extensive measurements and simulations studies aimed for ATLAS and CMS tracker requirements have been initiated which are...
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
14/11/2013, 14:55
Proton model (effective 2-defect model based on the EVL model) used in Synopsys Sentaurus package, has proven to produce matching simulation results with measurements. However, at high fluence (> 1e15 cm-2) and thus high oxide charge, the model does not produce radiation enhanced isolation to the strips, observed in a real p-type detector. Also simulated Cint and CCE loss in the center of the...
Dr
Vladimir Eremin
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
14/11/2013, 15:45
The influence of the bandgap temperature dependence Eg(T) on the parameters of irradiated Si detectors extracted from I(T) measurements was analyzed via transformation of “statistical” form of the rate equation for the current generation to the “activation” form. The energy of the current generation, Et = 0.65 eV, was defined for the single effective level I(T) parameterization. The two level...
Alexandre Chilingarov
(Lancaster University (GB))
14/11/2013, 16:05
New data on the temperature dependence of the current generated in Si bulk are presented. Modification of the test set-up allowed measurements with the sensor irradiated by 1E+16 neq per square cm.
Dr
Elena Verbitskaya
(Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
14/11/2013, 16:25
Enhancement of the collected charge Qc in Si detectors irradiated beyond 10^15 neq/cm2 is analyzed basing on the PTI model and compared with the internal gain in avalanche photodiodes. The results show that in heavily irradiated Si detectors Qc enhancement due to avalanche multiplication is strongly restricted and simultaneously stabilized by the negative feedback arisen from carrier trapping,...
Ranjeet Ranjeet
(University of Delhi (IN))
14/11/2013, 16:45
To address the problems caused by intense radiation environment in planned SLHC tracker, extensive measurements and simulations studies aimed for CMS tracker requirements have been initiated which are investigating different designs, materials and polarity for Si microstrip sensors. One of the most important task is to compare the sustainability of p+n- and n+p- type of Si strip sensors after...
Marco Bomben
(Centre National de la Recherche Scientifique (FR))
14/11/2013, 17:05
Beam test data and simulations can make accessible the electric field profile of silicon sensors. Different bulk materials, irradiation and annealing scenarios can be contrasted thanks to the charge profile technique (e.g.: T. Lari and C. Troncon, IEEE TNS, VOL. 53, NO. 5, OCTOBER 2006; V. Chiochia, IEEE TNS, VOL. 52, NO. 4, AUGUST 2005)
High pointing resolution telescopes and detailed TCAD...
Andreas Matthias Nurnberg
(KIT - Karlsruhe Institute of Technology (DE))
14/11/2013, 17:25
Standard (20 min including discussion)
T-CAD simulations are a powerful tool for understanding the properties of silicon sensors. Silvaco T-CAD allows the implementation of magnetic fields of several Tesla in the simulation. Using this simulation package, Lorentz angle measurements on strip sensors have been reproduced. Results on non-irradiated devices and the ongoing work of implementing radiation damage using an effective trap...
Vladimir Eremin
(Ioffe Physical Technical Institute of Russian Academy of Scienc)
14/11/2013, 17:45
