Conveners
Defect and Pad Detector Characterization
- Eckhart Fretwurst (II. Institut fuer Experimentalphysik)
Prof.
Juozas Vaitkus
(Vilnius University)
13/11/2013, 10:10
The electrical properties of the irradiated by neutrons Si are analyzed by means of the Hall effect and magnetoresistance temperature dependence in a few series of Si samples. It is demonstrated that the electron mobility decrease with temperature as a power law with index less than in the nonirradiated silicon and can become near to one in the highly irradiated silicon. The analyze of...
Gregor Kramberger
(Jozef Stefan Institute (SI))
13/11/2013, 10:30
Initial acceptor removal in p-type silicon detectors was studied for different samples after reactor neutron and 24 GeV proton irradiations. Although at HL-LHC fluences the initial acceptor removal is not important for standard detectors, it may play an important role in changing the properties of the multiplication layer of LGAD devices and consequent reduction of gain. A set of simple pad...
Prof.
Juozas Vaitkus
(Vilnius University)
13/11/2013, 10:50
The light pulse excited microwave conductivity decay method for surface recombination rate measurement is presented. The preliminary results are performed in the differently passivated silicon samples surface.
Gregor Kramberger
(Jozef Stefan Institute (SI))
13/11/2013, 11:30
Hannes Neugebauer
(Hamburg University (DE))
13/11/2013, 11:41
A clear understanding of the underlying physics is essential for the evaluation of detectors in high energy physics. For this purpose Micron detectors of different silicon types (FZ, MCz, n-bulk, p-bulk) provided by the RD50 collaboration have been irradiated with 24GeV protons at CERN PS up to fluences of 3e16 neq/cm2. In addition to the characteristics of leakage current (IV), capacitance...
Eckhart Fretwurst
(II. Institut fuer Experimentalphysik)
13/11/2013, 12:01
