Conveners
3D detectors and slim edges
- Giulio Pellegrini (Universidad de Valencia (ES))
- Giulio Pellegrini (Universidad de Valencia (ES))
Dr
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
15/11/2013, 09:00
Studies regarding the radiation damage induced by electrons of different kinetic energies, from 1.5 MeV to 27 MeV, are presented. The aim is to identify the chemical structure of those defects that have a direct impact on the device performance at the operating temperature. The results obtained via electrical characterization (DLTS&TSC) can be connected with structural and chemical...
Riccardo Mori
(Albert-Ludwigs-Universitaet Freiburg (DE))
15/11/2013, 09:20
Although 3D silicon sensors are characterized by higher capacitance (thus higher noise), lower spatial uniformity and more fabrication process complexity than standard sensors, the higher radiation hardness motivates the investigation of this layout in view of the LHC upgrade. In between the different 3D layouts, the double-sided represent the most attractive but also the most mechanically...
Ms
Francisca J. Muñoz Sánchez
(IFCA)
15/11/2013, 09:40
The Large Hadron Collider (LHC) is developing a very successfully work in the last two years, and it will suffer an important accelerator upgrade by 2020, the High Luminosity-LHC (HL-LHC). These improvements will increase by a factor ten the instantaneous luminosity as well as the particle luxes at the detectors, such as the Compact Muon Solenoid (CMS) experiment.The inner tracker detector...
Joern Lange
(IFAE Barcelona)
15/11/2013, 10:00
Tracking detectors for forward phycics experiments impose two critical requirements: first, the active area of the detector has to be as close as possible to the beam, which means that the dead region of the sensor has to be minimized. Second, the device has to be able to cope with an inhomogeneous radiation distribution. In this presentation results of beam tests of slim-edged 3D pixel...
Vitaliy Fadeyev
(University of California,Santa Cruz (US))
15/11/2013, 10:50
We are pursuing a “slim edge” technology which allows a drastic reduction of inactive region along the perimeter of silicon detectors. Such reduction would benefit construction of large-area tracker and imaging systems. Key components of this method are surface scribing, cleaving, and passivation of the resulting sidewall. We will give a short overview of the project and describe recent...
Stefano Terzo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
15/11/2013, 11:10
We present results of the characterization of n-in-p planar pixel modules employing 100 and 200 µm thin sensors with active edges produced at VTT, Finland, and 150 µm thin sensors produced at MPP/HLL.
These are interconnected with bump bonding to either FE-I3 or FE-I4 ATLAS read-out chips and irradiated up to a fluence of 1e16.
A comparison of the performance of the different sensor...
Anna Macchiolo
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
15/11/2013, 11:30
Tobias Wittig
(Technische Universitaet Dortmund (DE))
15/11/2013, 11:40
In the past, the CiS research institute has made a mark as a vendor of reliable radiation hard planar silicon sensors for various important HEP detectors.
In addition to the sensor production, it is aiming for an extension of the possibilities of in-house sensor-chip packaging. Initial tests of a combination of electroless nickel UBM and solder ball bumping have been started. This batch-wise...
Daniel Muenstermann
(Universite de Geneve (CH))
15/11/2013, 12:00
Standard (20 min including discussion)
Recently, certain CMOS processes featuring the option to apply significant bias voltages have shown the potential for producing drift-based radiation-hard tracking detectors.
We explore the concept of using a deep-submicron HV CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and...
Giulio Pellegrini
(Universidad de Valencia (ES)), Dr
Virginia Greco
(CNM-IMB-CSIC)
15/11/2013, 12:20
Standard (20 min including discussion)
We will show the first results of 3D ultra thin silicon detectors irradiated with neutrons at 10E16cm-2 1MeV eq. The detectors were tested at room and low temperature with alpha particles.
Giulio Pellegrini
(Universidad de Valencia (ES)),
Giulio Pellegrini
(Universidad de Valencia (ES))
15/11/2013, 12:40
