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3rd Workshop on Advanced Silicon Radiation Detectors (3D and P-type Technologies)

14–16 Apr 2008
Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain
Europe/Zurich timezone

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Session

P-type strip detectors 2

D14-A1
14 Apr 2008, 14:30
Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Residencia CSIC-Generalitat de Catalunya, Barcelona, Spain

Residencia de Investigadores del CSIC-Generalitat de Catalunya Carrer Hospital, 64. E08001, Barcelona, Spain

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  1. 2. Development of silicon microstrip sensors in 150 mm p-type wafers
    Yoshinobu Unno (KEK)
    14/04/2008, 14:30
    Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
    We have fabricated silicon microstrip sensors in 150 mm p-type wafers and carried out irradiation of protons of 70 MeV up to 2x10^15 1-MeV neutron equivalent/cm^2. Full depletion votages along the fluence of the protons of 70 MeV have shown quite different development than those in 100 mm p-type wafers. The sensors are made of different isolation structures in the n-strip side....
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  2. 5. Systematic measurements of p and n type diodes irradiated with protons, pions and neutrons
    Gregor Kramberger (Jozef Stefan Institute)
    14/04/2008, 15:00
    Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
    A large set of diodes processed by Micron on MCz and FZ n and p type materials was investigated up to equivalent fluences of 3e15 cm-2. Charge collection measurements were performed in addition to C-V. The charge collection efficiency was found to be better than expected from simulations and good agreement was found between full depletion voltages determined from charge collection and CV measurements.
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  3. 6. Radiation effects in p-type silicon diodes irradiated with protons and neutrons
    Vladimir Cindro (Jozef Stefan Institute)
    14/04/2008, 15:30
    Radiation hardness properties of p-type substrate silicon micro-strip detectors: neutron and proton irradiations
    Radiation effects in standard FZ, DOFZ and MCZ Si diodes were evaluated with C/V, I/V and TCT measurements. FDV, I and trapping times were measured. Diodes were irradiated with protons and neutrons with fluences up to 3*10**14. Measurements after combined proton/neutron irradiation will be also shown.
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