11–13 Jun 2014
Bucharest
Europe/Zurich timezone

Electron Induced Damage in Silicon - TRIM and TCAS Simulations

11 Jun 2014, 10:10
20m
Bucharest

Bucharest

Speaker

Prof. Gunnar Lindstroem (University of Hamburg)

Description

The maximum Si-recoil energy is strongly dependent on the electron energy, reaching values at e.g. 30 MeV, which are also specific for MeV neutron irradiation. A systematic investigation of the damage on the electron energy could therefore reveal a tool to distinguish between point and cluster effects, see report given ba Roxana Radu. Supporting calculations are presented here. Recoil energy distributions are calculated from Mott scattering and displacement cascades simulated using TRIM and Crystal-TCAS. Details are presented including intracascade recombinations. Results are discussed and compared with currently used damage functions.

Author

Prof. Gunnar Lindstroem (University of Hamburg)

Presentation materials