24th RD50 Workshop (Bucharest)

Session

Session 2 - Detector Characterization

11 Jun 2014, 14:00

Bucharest

Conveners

Session 2 - Detector Characterization

• Ulrich Parzefall (Albert-Ludwigs-Universitaet Freiburg (DE))

14. Measurement of the drift velocities of electrons and holes in high-ohmic <100> silicon

Christian Scharf (Hamburg University (DE))

11/06/2014, 14:00

Simulations of silicon sensors and extraction of parameters from (edge-)TCT measurements rely on the knowledge of a number of material parameters. One of them is the drift velocity for electrons and holes as function of electric field and temperature in high-purity silicon. So far the information on drift velocities for <100> silicon is quite limited. Therefore, <111> results are typically...

13. TCT, eTCT and I-DLTS measurement setups at the CERN SSD Lab

Christian Gallrapp (CERN)

11/06/2014, 14:20

Setups based on the transient current technique using pulsed LASERs with 660nm and 1064nm wavelength were built at the CERN SSD Lab. Microsecond LASER pulses are used in the I-DLTS setup to investigate charge carrier detrapping on irradiated silicon sensors. First measurement results from a set of proton irradiated silicon diodes exposed to red laser pulses of 1us to 5us are presented....

9. CCE and Edge_TCT measurements with ATLAS 07 and ATLAS 12 detectors

Vladimir Cindro (Jozef Stefan Institute (SI))

11/06/2014, 14:40

CCE efficiencies of two detector batches were measured before and after irradiations with neutrons and protons to fluences up to 5 10**15 cm-2. Annealing was performed at 60 C. Edge TCT measurements were used to probe the drift velocity distribution in the detector volume.

11. Status of Silicon Strip Sensor Measurements at Liverpool

Sven Wonsak (University of Liverpool (GB))

11/06/2014, 15:00

To investigate the current dependence of irradiated silicon strip detectors, ATLAS07 and Micron sensors were irradiated at Birmingham and Ljubljana with doses up to 2e16 neq/cm$^2$. IV measurements were performed at different temperatures which allow the calculation of the effective gap energy Eg (IV scaling) and the current related damage rate $\alpha$. TCT and edge TCT (Transient Current...

3. Heavily irradiated thin n-in-p planar pixel sensors and status of the new common RD50 productions

Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

11/06/2014, 15:20

N-in-p planar pixel sensors with an active thickness of 200 μm produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips and irradiated in Ljubljana, Los Alamos and KIT up to a fluence of 1.4×10^{16} n_{eq}/cm^2. Thin sensors are designed to ensure radiation hardness at high fluences, while...

32. Status of the new irradiation facilities in the CERN EAST HALL

Michael Moll (CERN)

11/06/2014, 15:40

The proton and mixed-field irradiation facilities in the CERN PS East Area (known as IRRAD1 and IRRAD2), were heavily and successfully exploited for irradiation of particle detectors, electronic components and materials since 1992. These facilities exploited the particle bursts - protons with momentum of 24GeV/c - delivered from the PS accelerator in “spills” of about 400ms (slow extraction)....