Gregor Kramberger
(Jozef Stefan Institute (SI))
13/06/2014, 09:00
Silicon n-p diodes with heavily doped p layer underneath the n implant were designed to benefit from charge multiplication process already before irradiation (Low Gain Amplification Detectors). Two different sets of such detectors with different gains were characterized before and after irradiation by reactor neutrons and recently also by 800 MeV protons to equivalent fluences of up to 1016...
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
13/06/2014, 09:20
Our experience with segmented LGAD is presented, based on
charge collection data, C-V measurements and simulations.
Alternatives to the present n++-p+-p- configuration are discussed.
Giulio Pellegrini
(CNM-IMB-CSIC)
13/06/2014, 09:40
I will show the final design of the new mask for the fabrication of LGAD diodes, strips and pixel detectors.
Mr
Nicolo Cartiglia
(Universita e INFN (IT))
13/06/2014, 10:00
In this contribution I review the progress towards the optimization of LGAD detectors for timing measurements. First results will be presented, together with a plan for additional measurements
Dr
Virginia Greco
(IMB-CNM-CSIC)
13/06/2014, 11:00
We will present the latest measurements of LGAD diodes performed with TCT laser (red and infra-red) and the preliminary measurements of LGAD PAD detectors irradiated with protons at Los Alamos.
Ulrich Parzefall
(Albert-Ludwigs-Universitaet Freiburg (DE))
13/06/2014, 11:20
We evaluate the long term evolution of the charge multiplication effect found in some sensors. This procedure is intended to test operation under realistic LHC conditions, such as exposure to extreme bias voltages for many days, bias voltage cycling, and running at very low temperature. We aim to understand if charge multiplication may be usefully relied upon for HL-HLC operation, or if it...
