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HFI/NQI 2010

Sep 12 – 17, 2010
CERN
Europe/Zurich timezone
The conference is now over. Thanks to all for their participation. <p> The talks from the various sessions are all online.

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Session

SEMICONDUCTORS, METALS AND INSULATORS

Sep 13, 2010, 2:00 PM
500/1-001 - Main Auditorium (CERN)

500/1-001 - Main Auditorium

CERN

CH - 1211 Geneva 23 Switzerland
400
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Conveners

SEMICONDUCTORS, METALS AND INSULATORS

  • Hans Hofsaess (University of Goettingen)

SEMICONDUCTORS, METALS AND INSULATORS

  • Kensaku Matsuta (Osaka Univ.)

SEMICONDUCTORS, METALS AND INSULATORS

  • Guido LANGOUCHE

Presentation materials

There are no materials yet.

  1. 51. Donor-Acceptor Complexes in ZnO
    Dr Manfred Deicher (Technische Physik, Universität des Saarlandes, D-66041 Saarbrücken, Germany)
    9/13/10, 2:00 PM
    Semiconductors, Metals and Insulators
    ORAL CONTRIBUTION
    One of the main obstacles to the technical application of many wide-gap semiconductors represents the difficulty to achieve reliable and sufficient p-type or n-type doping. Possible causes are the electrical compensation of dopants by native defects or other impurities present in the material. For the II-VI semiconductors CdTe, ZnTe, and ZnSe it has been shown [1,2] by perturbed Gamma-Gamma...
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  2. 25. Angular correlation studies on 172Lu(172Yb) in GaN and measurement at low temperature
    Mr Riccardo Valentini (HISKP der Universität Bonn)
    9/13/10, 2:20 PM
    Semiconductors, Metals and Insulators
    ORAL CONTRIBUTION
    For optoelectronic devices semiconductors with large band gap doped with rare earth are used. Doping is generally performed during growth but for more structured doping the ion implantation technique is preferable. The perturbed angular correlation technique is an ideal tool to study the annealing behavior of semiconductors after implantation. Usually, this method is only able to measure the...
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  3. 59. PAC study of the dynamic hyperfine interactions at 111In-doped Sc2O3 semiconductor and comparison with ab initio calculations
    Mr Diego Richard (Departamento de Física e Instituto de Física La Plata (IFLP, CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina.), Mr Emiliano Luis Muñoz (Departamento de Física e Instituto de Física La Plata (IFLP, CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata)
    9/13/10, 2:40 PM
    Semiconductors, Metals and Insulators
    ORAL CONTRIBUTION
    The combined experimental and theoretical approach based on electric-field gradient (EFG) determinations by means of hyperfine interaction measurements and ab initio predictions at impurity atoms has been shown to be a powerful tool to unravel structural and electronic characterizations of impurities in solids, in particular in semiconductor oxides [1-3]. In this work, PAC experiments using...
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  4. 32. Temperature dependence of the hyperfine fields of 111In in sapphire (Al2O3) single crystals
    Mr Michael Steffens (HISKP der Universität Bonn)
    9/13/10, 3:00 PM
    Semiconductors, Metals and Insulators
    POSTER
    The decay of 111In to 111Cd via electron capture, accompanied by Auger electrons, leaves the outmost atomic shell of the Cadmium in a highly ionized state. In PAC measurements, this so called “electron capture after effect” leads to a significant loss of anisotropy and can be associated with a highly fluctuating electric field gradient (EFG). The recovery of the 111Cd shell by electronic...
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  5. 175. MuSR studies of High Tc supercondictivity in iron pnictides
    H. KLAUSS
    9/16/10, 9:00 AM
  6. 114. Modeling Complex Diffusion Mechanisms in L12-Structured Compounds
    Matthew Zacate (Northern Kentucky University)
    9/17/10, 11:50 AM
    Semiconductors, Metals and Insulators
    ORAL CONTRIBUTION
    Semiconductors, Metals and Insulators
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