Conveners
SEMICONDUCTORS, METALS AND INSULATORS
- Hans Hofsaess (University of Goettingen)
SEMICONDUCTORS, METALS AND INSULATORS
- Kensaku Matsuta (Osaka Univ.)
SEMICONDUCTORS, METALS AND INSULATORS
- Guido LANGOUCHE
Dr
Manfred Deicher
(Technische Physik, Universität des Saarlandes, D-66041 Saarbrücken, Germany)
13/09/2010, 14:00
Semiconductors, Metals and Insulators
ORAL CONTRIBUTION
One of the main obstacles to the technical application of many wide-gap semiconductors represents the difficulty to achieve reliable and sufficient p-type or n-type doping. Possible causes are the electrical compensation of dopants by native defects or other impurities present in the material. For the II-VI semiconductors CdTe, ZnTe, and ZnSe it has been shown [1,2] by perturbed Gamma-Gamma...
Mr
Riccardo Valentini
(HISKP der Universität Bonn)
13/09/2010, 14:20
Semiconductors, Metals and Insulators
ORAL CONTRIBUTION
For optoelectronic devices semiconductors with large band gap doped with rare earth are used. Doping is generally performed during growth but for more structured doping the ion implantation technique is preferable. The perturbed angular correlation technique is an ideal tool to study the annealing behavior of semiconductors after implantation. Usually, this method is only able to measure the...
Mr
Diego Richard
(Departamento de Física e Instituto de Física La Plata (IFLP, CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata, Argentina.), Mr
Emiliano Luis Muñoz
(Departamento de Física e Instituto de Física La Plata (IFLP, CONICET-UNLP), Facultad de Ciencias Exactas, Universidad Nacional de La Plata, CC 67, 1900 La Plata)
13/09/2010, 14:40
Semiconductors, Metals and Insulators
ORAL CONTRIBUTION
The combined experimental and theoretical approach based on electric-field gradient (EFG) determinations by means of hyperfine interaction measurements and ab initio predictions at impurity atoms has been shown to be a powerful tool to unravel structural and electronic characterizations of impurities in solids, in particular in semiconductor oxides [1-3]. In this work, PAC experiments using...
Mr
Michael Steffens
(HISKP der Universität Bonn)
13/09/2010, 15:00
Semiconductors, Metals and Insulators
POSTER
The decay of 111In to 111Cd via electron capture, accompanied by Auger electrons, leaves the outmost atomic shell of the Cadmium in a highly ionized state.
In PAC measurements, this so called “electron capture after effect” leads to a significant loss of anisotropy and can be associated with a highly fluctuating electric field gradient (EFG).
The recovery of the 111Cd shell by electronic...
Matthew Zacate
(Northern Kentucky University)
17/09/2010, 11:50
Semiconductors, Metals and Insulators
ORAL CONTRIBUTION
Semiconductors, Metals and Insulators
