Name: 25th RD50 Workshop (CERN)
Start: 2014-11-19T08:30:00+01:00
End: 2014-11-21T18:00:00+01:00
Location: CERN

25th RD50 Workshop (CERN)

from Wednesday, November 19, 2014 (8:30 AM) to Friday, November 21, 2014 (6:00 PM)

Monday, November 17, 2014
Tuesday, November 18, 2014
Wednesday, November 19, 2014
9:00 AM Registration - Veronique Wedlake (CERN) Luis Alexandre Borralho Marinho (University of Aveiro (PT))
Registration
- Veronique Wedlake (CERN)
- Luis Alexandre Borralho Marinho (University of Aveiro (PT))
9:00 AM - 9:30 AM
Room: 500/1-001 - Main Auditorium
9:30 AM
9:30 AM - 9:40 AM
Room: 500/1-001 - Main Auditorium
Contributions

9:30 AM Welcome - Michael Moll (CERN)
9:40 AM
9:40 AM - 12:00 PM
Room: 500/1-001 - Main Auditorium
Contributions

9:40 AM Nitrogen impact on vacancy aggregation in silicon single crystals - Michael Kwestarz (Topsil Semiconductor Materials SA, 133 Wolczynska St., 01-919 Warsaw, Poland)

10:00 AM First results on properties and concentrations of radiation defect centers in nitrogen-enriched, high-resistivity FZ silicon - Pawel Kaminski (Institute of Electronic Materials Technology)

10:20 AM Point and extended defects in silicon induced by electron irradiation – dependence on the particle energy - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

11:10 AM Photoconductivity spectra as a tool for Si material stability control. - Juozas Vaitkus (Vilnius University)

11:30 AM Discussion on Defect and Material Characterization - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
12:00 PM Lunch
Lunch
12:00 PM - 1:15 PM
Room: 500/1-001 - Main Auditorium
1:15 PM
1:15 PM - 5:16 PM
Room: 500/1-001 - Main Auditorium
Contributions

1:15 PM Signal and Charge Collection Efficiency of n-in-p strip detectors after proton and neutron irradiation to HL-LHC fluences - Sven Wonsak (University of Liverpool (GB))

1:35 PM The RD50 testbeam - Marco Bomben (Lab. Phys. Nucl. Hautes Energies (FR))

1:55 PM Characterization of thin n-in-p planar pixel sensors and status of the new active edge pixel production - Botho Albrecht Paschen (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

2:15 PM Investigation of highly irradiated n+-in-n planar ATLAS pixel sensors - Andreas Justin Gisen (Technische Universitaet Dortmund (DE))

2:35 PM Status of Silicon Strip Sensor Measurements at Liverpool - Sven Wonsak (University of Liverpool (GB))

2:55 PM Characterization after neutron irradiation of Silicon Diodes for the CMS High Granular Calorimeter (HGCAL) - Esteban Curras Rivera (Universidad de Cantabria (ES))

3:15 PM Comparison of pixel detecftors AC and DC coupled to FE-I4 readout - Gianluigi Casse (University of Liverpool (GB))

3:35 PM Announcement: Trento Worskhop - Hartmut Sadrozinski (University of California,Santa Cruz (US))

4:05 PM New Technological Capabilities at CNM - David Flores (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))

4:25 PM Ongoing activities at CiS - Tobias Wittig (CIS Institut fuer Mikrosensorik GmbH (DE))

4:45 PM Discussion on Full Detector Systems - Gregor Kramberger (Jozef Stefan Institute (SI))
5:30 PM

5:30 PM - 7:00 PM
Room: 500/1-001 - Main Auditorium
Thursday, November 20, 2014
9:00 AM
9:00 AM - 12:10 PM
Room: 500/1-001 - Main Auditorium
Contributions

9:00 AM An Introduction to Edge-TCT measurements on irradiated HV-CMOSv3 sensors - Constantin Weisser (University of Manchester (GB))

9:20 AM Edge-TCT characterization of irradiated HV-CMOSv3 sensors - Marcos Fernandez Garcia (Universidad de Cantabria (ES))

9:40 AM Edge-TCT studies of irradiated HVCMOS sensor (an update) - Gregor Kramberger (Jozef Stefan Institute (SI))

10:00 AM E-TCT with laser beam directed parallel to strips - Igor Mandić (Jožef Stefan Institute)

10:20 AM Two Photon Absorption and carrier generation in semiconductors - Fco. Rogelio Palomo Pinto (School of Engineering, University of Sevilla)

11:10 AM TPA-TCT: A novel Transient Current Technique based on the Two Photon Absorption (TPA) process - Ivan Vila Alvarez (Universidad de Cantabria (ES))

11:30 AM TRACS: Transient Current Simulator - Pablo De Castro Manzano (Universidad de Cantabria (ES))

11:50 AM Discussion on HVCMOS and TCT techniques - Michael Moll (CERN)
12:30 PM Lunch
Lunch
12:30 PM - 1:30 PM
Room: 500/1-001 - Main Auditorium
1:30 PM
1:30 PM - 6:10 PM
Room: 4/3-006 - TH Conference Room
Contributions

1:30 PM Bulk defect investigations for proton irradiated sensors - Alexandra Junkes (Hamburg University (DE))

1:50 PM The new IRRAD facility at CERN - Maurice Glaser (CERN)

2:10 PM Study of Low-dose Radiation Resistance of Sidewall Passivation on p-type SCP Devices - Vitaliy Fadeyev (University of California,Santa Cruz (US))

2:30 PM Long-term HV stability of the collected charge in charge multiplication sensors - Christopher Betancourt (Albert-Ludwigs-Universitaet Freiburg (DE)) Susanne Kuehn (Albert-Ludwigs-Universitaet Freiburg (DE))

2:50 PM Effects of irradiation on LGAD devices with high excess current - Gregor Kramberger (Jozef Stefan Institute (SI))

3:10 PM Measurements on segmented LGAD devices - Emanuele Cavallaro (Universitat Autònoma de Barcelona (ES))

4:00 PM Measurements on thin LGAD Sensors - Hartmut Sadrozinski (SCIPP, UC santa Cruz)

4:20 PM Design and Fabrication of an Optimal Peripheral Region for the LGAD - Pablo Fernández-Martínez (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))

4:40 PM First results on the timing resolution properties of LGAD - Nicolo Cartiglia (Universita e INFN (IT))

5:00 PM Discussion on LGAD and Fast Timing - Virginia Greco (Instituto de Fisica Corpuscular (ES))
7:00 PM

7:00 PM - 11:30 PM
Room: 500/1-001 - Main Auditorium
Friday, November 21, 2014
9:00 AM
9:00 AM - 12:25 PM
Room: 500/1-001 - Main Auditorium
Contributions

9:00 AM TCAD simulations of irradiated silicon sensors (Vidyo) - Ranjeet Dalal (University of Delhi)

9:20 AM TCAD simulated surface damage in proton irradiated strip sensors: Investigation of interface traps vs non-uniform 3-level model - Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

9:40 AM Dopping profile Simulations and measurements - Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))

10:00 AM Surface Properties of Proton and Gamma Irradiated End-Cap Strip Mini Sensors - Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))

10:50 AM Investigation of the insulator layers for segmented silicon sensors before and after X-ray irradiation - Ioannis Kopsalis (University of Hamburg)

11:10 AM Alternative technologies for Low Resistance Strip Sensors at CNM - Miguel Ullan Comes (Instituto de Fisica Corpuscular (ES))

11:30 AM Electric field and mobility in extremely irradiated silicon - Marko Mikuz (Jozef Stefan Institute (SI))

11:50 AM Mobility in irradiated silicon - Juozas Vaitkus (Vilnius University (LT))

11:55 AM Discussion on TCAD - Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)

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