Name: 25th RD50 Workshop (CERN)
Start: 2014-11-19T08:30:00+01:00
End: 2014-11-21T18:00:00+01:00
Location: CERN

25th RD50 Workshop (CERN)

from Wednesday 19 November 2014 (08:30) to Friday 21 November 2014 (18:00)

Monday 17 November 2014
Tuesday 18 November 2014
Wednesday 19 November 2014
09:00 Registration - Veronique Wedlake (CERN) Luis Alexandre Borralho Marinho (University of Aveiro (PT))
Registration
- Veronique Wedlake (CERN)
- Luis Alexandre Borralho Marinho (University of Aveiro (PT))
09:00 - 09:30
Room: 500/1-001 - Main Auditorium
09:30
09:30 - 09:40
Room: 500/1-001 - Main Auditorium
Contributions

09:30 Welcome - Michael Moll (CERN)
09:40
09:40 - 12:00
Room: 500/1-001 - Main Auditorium
Contributions

09:40 Nitrogen impact on vacancy aggregation in silicon single crystals - Michael Kwestarz (Topsil Semiconductor Materials SA, 133 Wolczynska St., 01-919 Warsaw, Poland)

10:00 First results on properties and concentrations of radiation defect centers in nitrogen-enriched, high-resistivity FZ silicon - Pawel Kaminski (Institute of Electronic Materials Technology)

10:20 Point and extended defects in silicon induced by electron irradiation – dependence on the particle energy - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

11:10 Photoconductivity spectra as a tool for Si material stability control. - Juozas Vaitkus (Vilnius University)

11:30 Discussion on Defect and Material Characterization - Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
12:00 Lunch
Lunch
12:00 - 13:15
Room: 500/1-001 - Main Auditorium
13:15
13:15 - 17:16
Room: 500/1-001 - Main Auditorium
Contributions

13:15 Signal and Charge Collection Efficiency of n-in-p strip detectors after proton and neutron irradiation to HL-LHC fluences - Sven Wonsak (University of Liverpool (GB))

13:35 The RD50 testbeam - Marco Bomben (Lab. Phys. Nucl. Hautes Energies (FR))

13:55 Characterization of thin n-in-p planar pixel sensors and status of the new active edge pixel production - Botho Albrecht Paschen (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

14:15 Investigation of highly irradiated n+-in-n planar ATLAS pixel sensors - Andreas Justin Gisen (Technische Universitaet Dortmund (DE))

14:35 Status of Silicon Strip Sensor Measurements at Liverpool - Sven Wonsak (University of Liverpool (GB))

14:55 Characterization after neutron irradiation of Silicon Diodes for the CMS High Granular Calorimeter (HGCAL) - Esteban Curras Rivera (Universidad de Cantabria (ES))

15:15 Comparison of pixel detecftors AC and DC coupled to FE-I4 readout - Gianluigi Casse (University of Liverpool (GB))

15:35 Announcement: Trento Worskhop - Hartmut Sadrozinski (University of California,Santa Cruz (US))

16:05 New Technological Capabilities at CNM - David Flores (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))

16:25 Ongoing activities at CiS - Tobias Wittig (CIS Institut fuer Mikrosensorik GmbH (DE))

16:45 Discussion on Full Detector Systems - Gregor Kramberger (Jozef Stefan Institute (SI))
17:30

17:30 - 19:00
Room: 500/1-001 - Main Auditorium
Thursday 20 November 2014
09:00
09:00 - 12:10
Room: 500/1-001 - Main Auditorium
Contributions

09:00 An Introduction to Edge-TCT measurements on irradiated HV-CMOSv3 sensors - Constantin Weisser (University of Manchester (GB))

09:20 Edge-TCT characterization of irradiated HV-CMOSv3 sensors - Marcos Fernandez Garcia (Universidad de Cantabria (ES))

09:40 Edge-TCT studies of irradiated HVCMOS sensor (an update) - Gregor Kramberger (Jozef Stefan Institute (SI))

10:00 E-TCT with laser beam directed parallel to strips - Igor Mandić (Jožef Stefan Institute)

10:20 Two Photon Absorption and carrier generation in semiconductors - Fco. Rogelio Palomo Pinto (School of Engineering, University of Sevilla)

11:10 TPA-TCT: A novel Transient Current Technique based on the Two Photon Absorption (TPA) process - Ivan Vila Alvarez (Universidad de Cantabria (ES))

11:30 TRACS: Transient Current Simulator - Pablo De Castro Manzano (Universidad de Cantabria (ES))

11:50 Discussion on HVCMOS and TCT techniques - Michael Moll (CERN)
12:30 Lunch
Lunch
12:30 - 13:30
Room: 500/1-001 - Main Auditorium
13:30
13:30 - 18:10
Room: 4/3-006 - TH Conference Room
Contributions

13:30 Bulk defect investigations for proton irradiated sensors - Alexandra Junkes (Hamburg University (DE))

13:50 The new IRRAD facility at CERN - Maurice Glaser (CERN)

14:10 Study of Low-dose Radiation Resistance of Sidewall Passivation on p-type SCP Devices - Vitaliy Fadeyev (University of California,Santa Cruz (US))

14:30 Long-term HV stability of the collected charge in charge multiplication sensors - Christopher Betancourt (Albert-Ludwigs-Universitaet Freiburg (DE)) Susanne Kuehn (Albert-Ludwigs-Universitaet Freiburg (DE))

14:50 Effects of irradiation on LGAD devices with high excess current - Gregor Kramberger (Jozef Stefan Institute (SI))

15:10 Measurements on segmented LGAD devices - Emanuele Cavallaro (Universitat Autònoma de Barcelona (ES))

16:00 Measurements on thin LGAD Sensors - Hartmut Sadrozinski (SCIPP, UC santa Cruz)

16:20 Design and Fabrication of an Optimal Peripheral Region for the LGAD - Pablo Fernández-Martínez (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))

16:40 First results on the timing resolution properties of LGAD - Nicolo Cartiglia (Universita e INFN (IT))

17:00 Discussion on LGAD and Fast Timing - Virginia Greco (Instituto de Fisica Corpuscular (ES))
19:00

19:00 - 23:30
Room: 500/1-001 - Main Auditorium
Friday 21 November 2014
09:00
09:00 - 12:25
Room: 500/1-001 - Main Auditorium
Contributions

09:00 TCAD simulations of irradiated silicon sensors (Vidyo) - Ranjeet Dalal (University of Delhi)

09:20 TCAD simulated surface damage in proton irradiated strip sensors: Investigation of interface traps vs non-uniform 3-level model - Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))

09:40 Dopping profile Simulations and measurements - Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))

10:00 Surface Properties of Proton and Gamma Irradiated End-Cap Strip Mini Sensors - Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))

10:50 Investigation of the insulator layers for segmented silicon sensors before and after X-ray irradiation - Ioannis Kopsalis (University of Hamburg)

11:10 Alternative technologies for Low Resistance Strip Sensors at CNM - Miguel Ullan Comes (Instituto de Fisica Corpuscular (ES))

11:30 Electric field and mobility in extremely irradiated silicon - Marko Mikuz (Jozef Stefan Institute (SI))

11:50 Mobility in irradiated silicon - Juozas Vaitkus (Vilnius University (LT))

11:55 Discussion on TCAD - Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)

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