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An extensible open-source C++ software for the simulation of the
drift dynamics of electrons and holes drift in semiconductor detectors
of complex geometries has been developed in order to understand transient
currents and charge collection efficiencies of arbitrary charge distributions.
The simulation makes use of Ramo's theorem to obtain induced currents in the
electrodes. Efficient open source C++ numerical libraries are used to obtain
the electric and weighting field using finite-element methods and to
simulate the carrier transport. A graphical user interface is also provided.
The tool has already been proved useful to model laser induced transient
currents.