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09:00
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Registration
-
Veronique Wedlake
(CERN)
Luis Alexandre Borralho Marinho
(University of Aveiro (PT))
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09:30
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Welcome
-
Michael Moll
(CERN)
(until 09:40)
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09:30
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Welcome
-
Michael Moll
(CERN)
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09:40
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Defect and Material Characterization
-Dr
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
(until 12:00)
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09:40
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Nitrogen impact on vacancy aggregation in silicon single crystals
- Mr
Michael Kwestarz
(Topsil Semiconductor Materials SA, 133 Wolczynska St., 01-919 Warsaw, Poland)
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10:00
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First results on properties and concentrations of radiation defect centers in nitrogen-enriched, high-resistivity FZ silicon
- Prof.
Pawel Kaminski
(Institute of Electronic Materials Technology)
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10:20
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Point and extended defects in silicon induced by electron irradiation – dependence on the particle energy
- Dr
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
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10:40
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--- Coffee Break ---
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11:10
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Photoconductivity spectra as a tool for Si material stability control.
- Prof.
Juozas Vaitkus
(Vilnius University)
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11:30
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Discussion on Defect and Material Characterization
- Dr
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
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09:00
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TCT techniques and HVCMOS
-
Michael Moll
(CERN)
(until 12:10)
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09:00
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An Introduction to Edge-TCT measurements on irradiated HV-CMOSv3 sensors
-
Constantin Weisser
(University of Manchester (GB))
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09:20
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Edge-TCT characterization of irradiated HV-CMOSv3 sensors
-
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
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09:40
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Edge-TCT studies of irradiated HVCMOS sensor (an update)
-
Gregor Kramberger
(Jozef Stefan Institute (SI))
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10:00
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E-TCT with laser beam directed parallel to strips
-
Igor Mandić
(Jožef Stefan Institute)
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10:20
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Two Photon Absorption and carrier generation in semiconductors
- Dr
Fco. Rogelio Palomo Pinto
(School of Engineering, University of Sevilla)
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10:40
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--- Coffee ---
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11:10
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TPA-TCT: A novel Transient Current Technique based on the Two Photon Absorption (TPA) process
- Dr
Ivan Vila Alvarez
(Universidad de Cantabria (ES))
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11:30
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TRACS: Transient Current Simulator
-
Pablo De Castro Manzano
(Universidad de Cantabria (ES))
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11:50
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Discussion on HVCMOS and TCT techniques
-
Michael Moll
(CERN)
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09:00
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TCAD and Surface Damage
-
Gianluigi Casse
(University of Liverpool (GB))
(until 12:25)
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09:00
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TCAD simulations of irradiated silicon sensors (Vidyo)
-
Ranjeet Dalal
(University of Delhi)
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09:20
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TCAD simulated surface damage in proton irradiated strip sensors: Investigation of interface traps vs non-uniform 3-level model
-
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
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09:40
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Dopping profile Simulations and measurements
-
Vagelis Gkougkousis
(Laboratoire de l'Accelerateur Lineaire (FR))
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10:00
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Surface Properties of Proton and Gamma Irradiated End-Cap Strip Mini Sensors
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Marcela Mikestikova
(Acad. of Sciences of the Czech Rep. (CZ))
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10:20
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--- Coffee ---
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10:50
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Investigation of the insulator layers for segmented silicon sensors before and after X-ray irradiation
-
Ioannis Kopsalis
(University of Hamburg)
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11:10
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Alternative technologies for Low Resistance Strip Sensors at CNM
- Dr
Miguel Ullan Comes
(Instituto de Fisica Corpuscular (ES))
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11:30
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Electric field and mobility in extremely irradiated silicon
-
Marko Mikuz
(Jozef Stefan Institute (SI))
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11:50
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Mobility in irradiated silicon
- Prof.
Juozas Vaitkus
(Vilnius University (LT))
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11:55
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Discussion on TCAD
-
Vladimir Eremin
(Ioffe Physical Technical Institute of Russian Academy of Scienc)
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12:00
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--- Lunch ---
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13:15
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Segmented Sensors, Test Beams and Detector Systems
-
Gregor Kramberger
(Jozef Stefan Institute (SI))
(until 17:16)
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13:15
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Signal and Charge Collection Efficiency of n-in-p strip detectors after proton and neutron irradiation to HL-LHC fluences
-
Sven Wonsak
(University of Liverpool (GB))
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13:35
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The RD50 testbeam
-
Marco Bomben
(Lab. Phys. Nucl. Hautes Energies (FR))
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13:55
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Characterization of thin n-in-p planar pixel sensors and status of the new active edge pixel production
-
Botho Albrecht Paschen
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
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14:15
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Investigation of highly irradiated n+-in-n planar ATLAS pixel sensors
-
Andreas Justin Gisen
(Technische Universitaet Dortmund (DE))
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14:35
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Status of Silicon Strip Sensor Measurements at Liverpool
-
Sven Wonsak
(University of Liverpool (GB))
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14:55
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Characterization after neutron irradiation of Silicon Diodes for the CMS High Granular Calorimeter (HGCAL)
-
Esteban Curras Rivera
(Universidad de Cantabria (ES))
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15:15
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Comparison of pixel detecftors AC and DC coupled to FE-I4 readout
-
Gianluigi Casse
(University of Liverpool (GB))
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15:35
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Announcement: Trento Worskhop
-
Hartmut Sadrozinski
(University of California,Santa Cruz (US))
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15:36
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--- Coffee Break ---
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16:05
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New Technological Capabilities at CNM
- Dr
David Flores
(Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
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16:25
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Ongoing activities at CiS
-
Tobias Wittig
(CIS Institut fuer Mikrosensorik GmbH (DE))
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16:45
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Discussion on Full Detector Systems
-
Gregor Kramberger
(Jozef Stefan Institute (SI))
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17:30
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Collaboration Board
-
Gregor Kramberger
(Jozef Stefan Institute (SI))
(until 19:00)
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12:30
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--- Lunch ---
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13:30
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LGAD
-
Virginia Greco
(Instituto de Fisica Corpuscular (ES))
Hartmut Sadrozinski
(University of California,Santa Cruz (US))
(until 18:10)
(4/3-006 - TH Conference Room)
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13:30
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Bulk defect investigations for proton irradiated sensors
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Alexandra Junkes
(Hamburg University (DE))
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13:50
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The new IRRAD facility at CERN
-
Maurice Glaser
(CERN)
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14:10
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Study of Low-dose Radiation Resistance of Sidewall Passivation on p-type SCP Devices
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Vitaliy Fadeyev
(University of California,Santa Cruz (US))
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14:30
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Long-term HV stability of the collected charge in charge multiplication sensors
-
Christopher Betancourt
(Albert-Ludwigs-Universitaet Freiburg (DE))
Susanne Kuehn
(Albert-Ludwigs-Universitaet Freiburg (DE))
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14:50
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Effects of irradiation on LGAD devices with high excess current
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Gregor Kramberger
(Jozef Stefan Institute (SI))
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15:10
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Measurements on segmented LGAD devices
-
Emanuele Cavallaro
(Universitat Autònoma de Barcelona (ES))
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15:30
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--- Coffee ---
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16:00
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Measurements on thin LGAD Sensors
-
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
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16:20
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Design and Fabrication of an Optimal Peripheral Region for the LGAD
- Dr
Pablo Fernández-Martínez
(Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
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16:40
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First results on the timing resolution properties of LGAD
- Mr
Nicolo Cartiglia
(Universita e INFN (IT))
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17:00
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Discussion on LGAD and Fast Timing
-
Virginia Greco
(Instituto de Fisica Corpuscular (ES))
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19:00
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Dinner
-
Maurice Glaser
(CERN)
Veronique Wedlake
(CERN)
(until 23:30)
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