- Virginia Greco (Instituto de Fisica Corpuscular (ES))
- Hartmut Sadrozinski (University of California,Santa Cruz (US))
Alexandra Junkes (Hamburg University (DE))
11/20/14, 1:30 PM
For irradiation experiments, protons with energies ranging from 23 MeV to 23 GeV are often used instead of a mixture of charged hadrons, their radiation induced damage to the silicon being rather similar. However, in oxygen rich silicon, NIEL violation con- cerning the full depletion voltage has been observed. In this presentation results from investigations on bulk defects in silicon...
Maurice Glaser (CERN)
11/20/14, 1:50 PM
Vitaliy Fadeyev (University of California,Santa Cruz (US))
11/20/14, 2:10 PM
We have been investigating Scribe-Cleave-Passivate (SCP) method of making slim edges on silicon sensors. For n-type devices commonly used dielectrics, such as silicon oxide and nitride, work well and they are radiation resistant. For p-type devices we used alumina (Al2O3) for this purpose due to negative interface charge it forms on the border with silicon surface. Our initial radiation tests...
Christopher Betancourt (Albert-Ludwigs-Universitaet Freiburg (DE)), Susanne Kuehn (Albert-Ludwigs-Universitaet Freiburg (DE))
11/20/14, 2:30 PM
Charge multiplications (CM) detectors have been proposed as candidates for radiation tolerant detectors for the High-Luminosity upgrades of the ATLAS and CMS experiments. An open question in the implementation of such sensors has been how the signal in the CM mode evolves over long-time periods under high-voltage conditions and voltage cycling, as would be relevant in applications at the...
Gregor Kramberger (Jozef Stefan Institute (SI))
11/20/14, 2:50 PM
Silicon n-p diodes with heavily doped p layer underneath the n implant were designed to benefit from charge multiplication process already before irradiation. The leakage current of the devices produced varies by few orders of magnitude. Its origin it is not clear yet, but it has an impact on the device performance after the irradiation. The excess holes trapped at the deep traps cause the...
Emanuele Cavallaro (Universitat Autònoma de Barcelona (ES))
11/20/14, 3:10 PM
The Low Gain Avalanche Detector (LGAD) is one of the technologies currently under development for radiation hard trackers. The concept is to generate a high electric field region inside the semiconductor material. Charge carriers crossing this region may acquire high enough energy to generate secondary ionization initializing a multiplication cascade and enhancing the charge collected on...
Hartmut Sadrozinski (SCIPP, UC santa Cruz)
11/20/14, 4:00 PM
We will show measurements and simulations on thin LGAD sensors and discuss the prospect for ultra-fast timing.
Dr Pablo Fernández-Martínez (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
11/20/14, 4:20 PM
An optimal design of the peripheral region prevents the Low Gain Avalanche Detectors (LGAD) from undesirable malfunctions, which may compromise the accomplishment of their outstanding possibilities as charge particle detectors for High Energy Physics experiments. Without a proper design, LGAD detectors may suffer from premature breakdown or high leakage current levels, which hinder the signal...
Mr Nicolo Cartiglia (Universita e INFN (IT))
11/20/14, 4:40 PM
In this contribution I will show the first test beam results obtained with CNM 300 micron thick detectors and compare them with laboratory measurements and simulations.
Virginia Greco (Instituto de Fisica Corpuscular (ES))
11/20/14, 5:00 PM