Luis Alexandre Borralho Marinho
(University of Aveiro (PT)),
Veronique Wedlake
(CERN)
19/11/2014, 09:00
Mr
Michael Kwestarz
(Topsil Semiconductor Materials SA, 133 Wolczynska St., 01-919 Warsaw, Poland)
19/11/2014, 09:40
Topsil is a world leading producer of ultrapure FZ Si wafers including the high resistivity material suitable for manufacturing of particle detectors. The company priority is to develop and supply the device-grade material with new, better properties. One of the directions is to study effect of nitrogen doping on density of voids in FZ Si crystals. In view of results reported in literature the...
Prof.
Pawel Kaminski
(Institute of Electronic Materials Technology)
19/11/2014, 10:00
High-resolution photoinduced transient spectroscopy (HRPITS) has been used to determine the properties and concentrations of radiation defect centers produced by the irradiation with 23-MeV neutrons in monocrystalline, nitrogen-enriched, high-resistivity silicon, grown by the float zone (FZ) method. The nitrogen concentration in the material ranged from 9E14 to 2.5E15 cm^-3. The material was...
Dr
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
19/11/2014, 10:20
The defect formation, from point defects to clusters, is scanned by performing irradiation with electrons of five different energies ranging from 1.5 MeV to 27 MeV. The radiation damage induced by electrons has been investigated in terms of radiation induced defects, their evolution in time and impact on the electrical performance of silicon diodes. Our investigations demonstrate that...
Prof.
Juozas Vaitkus
(Vilnius University)
19/11/2014, 11:10
Investigation of different types of Silicon wafers (a few series of MCZ,FZ, epi) allow to reveal the properties of sample that are related with a possible origin of the material stability. It was observed two effects that are seen to be related to the performance of detector fabricated from this material:
1) There are three types of Si. In two groups it was observed a difference in the...
Dr
Ioana Pintilie
(NIMP Bucharest-Magurele, Romania)
19/11/2014, 11:30
Sven Wonsak
(University of Liverpool (GB))
19/11/2014, 13:15
For the upgrade of the silicon strip tracker of the ATLAS experiment a detailed study was conducted on silicon strip mini sensors. About 20.000 silicon strip detector modules are foreseen to be built for the upgrade of the inner tracker in 2023. Various tasks in prototyping are currently ongoing. For the test of possible sensors a large number of n-in-p mini strip sensors from Hamamatsu...
Marco Bomben
(Lab. Phys. Nucl. Hautes Energies (FR))
19/11/2014, 13:35
The highlights from the October testbeam will be presented.
Botho Albrecht Paschen
(Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
19/11/2014, 13:55
N-in-p planar pixel sensors with an active thickness of 200 μm produced at CiS,
and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and
FE-I4 read-out chips and irradiated in Ljubljana, Los Alamos and KIT up to a fluence of 1.4×10^{16} n_{eq}/cm^2.
Charge collection properties and tracking efficiencies are studied to...
Andreas Justin Gisen
(Technische Universitaet Dortmund (DE))
19/11/2014, 14:15
Several FE-I3 sized n$^+$-in-n single chip sensors have been irradiated to fluences up to $2 \cdot 10^{16} n_{eq}/cm^2$ which may possibly be reached in the inner ATLAS pixel layers in HL-LHC. To determine the scaling behaviour, the leakage current was measured depending on the voltage or on the temperature for individual sensors.
In addition to these measurements an FE-I3 n$^+$-in-n...
Sven Wonsak
(University of Liverpool (GB))
19/11/2014, 14:35
Dedicated RD50 charge multiplication sensors were annealed at room temperature and charge collection measurements were performed after several annealing steps. The multiplication sensors feature different structures specially designed to take advantage of multiplication after heavy irradiation. These devices were produced by Micron Semiconductor Ltd and irradiated with neutrons to fluences of...
Esteban Curras Rivera
(Universidad de Cantabria (ES))
19/11/2014, 14:55
The CMS collaboration is planning to upgrade the forward calorimeters as these will not be sufficiently performant with the expected HL-LHC (High Luminosity LHC) conditions. One of the proposed calorimeter options is the High Granularity Calorimeter (HGC). It is realized as a sampling calorimeter with layers of silicon detectors that feature very high longitudinal and lateral granularities and...
Gianluigi Casse
(University of Liverpool (GB))
19/11/2014, 15:15
After high hadron radiation fluences, the traditional DC coupling of pixel sensors to readout electronics can lead to noise and signal distortion problems, due to the significant current flowing from the sensor through the electronics. AC coupling can offer a more favorable way for feeding the signal to the pre-amplifier, provided that the coupling strength yields a good signal to noise ratio....
Hartmut Sadrozinski
(University of California,Santa Cruz (US))
19/11/2014, 15:35
Dr
David Flores
(Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
19/11/2014, 16:05
In this talk, we will present some technological capabilities that could be of interest for the RD50 community. In this sense, the first results from new PiN diodes integrated on 6-inch N-silicon wafers will be shown. To perform this 6-inch technological process we have upgraded the standard CNM 4-inch process to the new wafer size. Additionally, we will describe the works performed to...
Tobias Wittig
(CIS Institut fuer Mikrosensorik GmbH (DE))
19/11/2014, 16:25
At this time, the CiS research institute is engaged in developments of radiation detector technologies on several different fields. Current projects are dealing e.g. with defect engineering, active edge sensors, large area thinned sensors and sensor-chip packaging technologies.
For large area sensors, the need for smaller thicknesses can be approached by etching cavities to the sensors...
Gregor Kramberger
(Jozef Stefan Institute (SI))
19/11/2014, 16:45
Constantin Weisser
(University of Manchester (GB))
20/11/2014, 09:00
Passive $100 \times 100 \,\mu$m test diodes in an unirradiated and an $1 \times 10^{15} Neq \,{cm}^{-2}$ irradiated HV2FEI4v3 HV-CMOS silicon sensor were analysed using the edge TCT technique. The observed signal had fast and slow contributions, that were interpreted as drift and diffusion. The former peaked in a region, that was interpreted as the depletion region, while the latter peaked...
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
20/11/2014, 09:20
In high voltage monolithic detectors built on HV-CMOS technology the, usually small, n-well collecting diode is replaced by a long and deep n-well built on a low resistivity p-type substrate. The extended deep n-well allows partial depletion of the lightly doped region lying underneath. Charge collection in the depleted region is by drift. Some other charge may also appear in the depleted...
Gregor Kramberger
(Jozef Stefan Institute (SI))
20/11/2014, 09:40
A HVCMOS sensor (HVCMOS2FEI4) was investigated before and after the irradiation with Edge-TCT. Key properties of the charge collection in p substrate were determined by different analysis methods. It was found that diffusion contribution to the the charge collection is reduced, but the depleted region is not affected much after relatively low fluences of up to 5e14 neq/cm2.
Igor Mandić
(Jožef Stefan Institute)
20/11/2014, 10:00
In usual E-TCT measurements focused IR (1064 nm) laser beam is directed to the edge of the detector so that the laser beam is perpendicular to the direction of the strips. In this presentation results of E-TCT measurements with laser beam directed parallel to the strip will be presented and compared with »standard« E-TCT. Measurements were done with HPK mini strip detectors irradiated with neutrons.
Dr
Fco. Rogelio Palomo Pinto
(School of Engineering, University of Sevilla)
20/11/2014, 10:20
Silicon is transparent to low intensity laser light with wavelength bigger than 1100 nm: Photon wavelength is beyond the energy gap so there is no possible linear quantum absorption.
Only at the focal point, light intensity can be high enough to switch to simultaneous absorption of two photons with half the gap energy each. This nonlinear absorption opens up a new technique for pair...
Dr
Ivan Vila Alvarez
(Universidad de Cantabria (ES))
20/11/2014, 11:10
Transient Current Techniques (TCT) based on laser-induced currents produced by Single Photon Absorption (SPA) processes in the sensor substrate have been used extensively to study the electric field distribution of irradiated silicon sensors. A new laser-based Transient Current Technique is introduced here for the first time where the free charge carriers are created in a Two Photon Absorption...
Pablo De Castro Manzano
(Universidad de Cantabria (ES))
20/11/2014, 11:30
TRACS: Transient Current Simulator
An extensible open-source C++ software for the simulation of the
drift dynamics of electrons and holes drift in semiconductor detectors
of complex geometries has been developed in order to understand transient
currents and charge collection efficiencies of arbitrary charge distributions.
The simulation makes use...
Michael Moll
(CERN)
20/11/2014, 11:50
Alexandra Junkes
(Hamburg University (DE))
20/11/2014, 13:30
For irradiation experiments, protons with energies ranging from 23 MeV to 23 GeV are often used instead of a mixture of charged hadrons, their radiation induced damage to the silicon being rather similar. However, in oxygen rich silicon, NIEL violation con- cerning the full depletion voltage has been observed. In this presentation results from investigations on bulk defects in silicon...
Vitaliy Fadeyev
(University of California,Santa Cruz (US))
20/11/2014, 14:10
We have been investigating Scribe-Cleave-Passivate (SCP) method of making slim edges on silicon sensors. For n-type devices commonly used dielectrics, such as silicon oxide and nitride, work well and they are radiation resistant. For p-type devices we used alumina (Al2O3) for this purpose due to negative interface charge it forms on the border with silicon surface. Our initial radiation tests...
Christopher Betancourt
(Albert-Ludwigs-Universitaet Freiburg (DE)),
Susanne Kuehn
(Albert-Ludwigs-Universitaet Freiburg (DE))
20/11/2014, 14:30
Charge multiplications (CM) detectors have been proposed as candidates for radiation tolerant detectors for the High-Luminosity upgrades of the ATLAS and CMS experiments. An open question in the implementation of such sensors has been how the signal in the CM mode evolves over long-time periods under high-voltage conditions and voltage cycling, as would be relevant in applications at the...
Gregor Kramberger
(Jozef Stefan Institute (SI))
20/11/2014, 14:50
Silicon n-p diodes with heavily doped p layer underneath the n implant were designed to benefit from charge multiplication process already before irradiation. The leakage current of the devices produced varies by few orders of magnitude. Its origin it is not clear yet, but it has an impact on the device performance after the irradiation. The excess holes trapped at the deep traps cause the...
Emanuele Cavallaro
(Universitat Autònoma de Barcelona (ES))
20/11/2014, 15:10
The Low Gain Avalanche Detector (LGAD) is one of the technologies currently under development for radiation hard trackers.
The concept is to generate a high electric field region inside the semiconductor material. Charge carriers crossing this region may acquire high enough energy to generate secondary ionization initializing a multiplication cascade and enhancing the charge collected on...
Hartmut Sadrozinski
(SCIPP, UC santa Cruz)
20/11/2014, 16:00
We will show measurements and simulations on thin LGAD sensors
and discuss the prospect for ultra-fast timing.
Dr
Pablo Fernández-Martínez
(Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
20/11/2014, 16:20
An optimal design of the peripheral region prevents the Low Gain Avalanche Detectors (LGAD) from undesirable malfunctions, which may compromise the accomplishment of their outstanding possibilities as charge particle detectors for High Energy Physics experiments. Without a proper design, LGAD detectors may suffer from premature breakdown or high leakage current levels, which hinder the signal...
Mr
Nicolo Cartiglia
(Universita e INFN (IT))
20/11/2014, 16:40
In this contribution I will show the first test beam results obtained with CNM 300 micron thick detectors and compare them with laboratory measurements and simulations.
Virginia Greco
(Instituto de Fisica Corpuscular (ES))
20/11/2014, 17:00
Ranjeet Dalal
(University of Delhi)
21/11/2014, 09:00
The TCAD modeling of radiation damage for the silicon sensors not only provides understanding of the radiation damage, it is also helpful in the sensor design optimization. But radiation damage simulation of silicon sensors must be carried out by simultaneous incorporation of appropriate bulk and surface damages since both the strip and pixel sensors undergo these degrading effects. The use of...
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
21/11/2014, 09:20
Recent developments in the simulation work group suggest the possibility to reproduce the experimentally observed surface properties of
proton irradiated silicon strip sensors by the implementation of interface traps at the Si/SiO2 interface. This could offer an alternative for
the non-uniform 3-level model applied in Synopsys Sentaurus package, where a shallow acceptor level is added to...
Vagelis Gkougkousis
(Laboratoire de l'Accelerateur Lineaire (FR))
21/11/2014, 09:40
N-in-N, N-in-P and p-Spray implants with varied parameters are simulated and compared with Secondary Ion Mass Spectroscopy measurements in an attempt to understand device characteristics and calibrate the simulation framework. A very good agreement is observed for the intermediate and high doses, while corrections are implemented for measurements performed through the screen oxide layer. Using...
Marcela Mikestikova
(Acad. of Sciences of the Czech Rep. (CZ))
21/11/2014, 10:00
The electrical characteristics of different types of end-cap miniature silicon strip sensors, ATLAS12A, were evaluated before and after proton and gamma irradiation. We report on the bulk damage aspects, including the increase of leakage current and evaluation of the full depletion voltage as well as the surface damage, including the decrease of inter-strip resistance, changes in inter-strip...
Ioannis Kopsalis
(University of Hamburg)
21/11/2014, 10:50
For the proper simulation and understanding of segmented silicon sensors the surface boundary conditions and the charge density distribution in the SiO2 layer (and other insulator layers if present), as well as at the Si-SiO2 interface have to be known. It has been observed previously, that the boundary conditions on the sensor surface change with relative humidity, RH. A simulation example of...
Dr
Miguel Ullan Comes
(Instituto de Fisica Corpuscular (ES))
21/11/2014, 11:10
Results from the newly fabricated Low Resistance (LowR) Strip Sensors will be presented. In this third batch fabricated at CNM-Barcelona, new technological solutions have been implemented to obtain the needed low resistivity in the strips in order to obtain a full protection versus beam losses. As a first technological alternative, a Titanium Silicide (TiSi2) layer has been created on top of...
Marko Mikuz
(Jozef Stefan Institute (SI))
21/11/2014, 11:30
Electric field in silicon irradiated with neutrons up to 1e17 n_eq/cm^2 was investigated by edge-TCT. Methods for absolute determination of electric field were developed. From the v(E) dependence mobility degradation with fluence was extracted. A simple field structure was observed, consistent with a SCR and "ENB", a region that does not contribute to leakage current and the electric field is...
Prof.
Juozas Vaitkus
(Vilnius University (LT))
21/11/2014, 11:50
Vladimir Eremin
(Ioffe Physical Technical Institute of Russian Academy of Scienc)
21/11/2014, 11:55
Leonid Makarenko
(Byelorussian State University (BY))
The concept of defect cluster is widely used to interpret effects of neutron irradiation on electrical characteristics of semiconductor crystals and devices. To predict these effects one needs to know the types of defects inside the clusters (donors or acceptors), their spatial distribution and energy levels and also the cluster size and shape. In early papers by Gossick (1959) the electrical...
Jessica Metcalfe
(Brookhaven National Laboratory (US))
Thin Film technology has widespread applications in everyday electronics, notably Liquid Crystal Display screens, solar cells, and organic light emitting diodes. We explore the potential of this technology as charged particle radiation tracking detectors for use in High Energy Physics experiments such as those at the Large Hadron Collider or the Relativistic Heavy Ion Collider. Through modern...
