Nov 19 – 21, 2014
Europe/Zurich timezone

Edge-TCT characterization of irradiated HV-CMOSv3 sensors

Nov 20, 2014, 9:20 AM
500/1-001 - Main Auditorium (CERN)

500/1-001 - Main Auditorium


503-1-001 (Council Chamber) on 19th Nov ; 500-1-001(Main auditorium) on 20th in the morning and 4-3-006 (TH auditorium) in the afternoon; 500-1-001(Main auditorium) on 21st Nov.
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Marcos Fernandez Garcia (Universidad de Cantabria (ES))


In high voltage monolithic detectors built on HV-CMOS technology the, usually small, n-well collecting diode is replaced by a long and deep n-well built on a low resistivity p-type substrate. The extended deep n-well allows partial depletion of the lightly doped region lying underneath. Charge collection in the depleted region is by drift. Some other charge may also appear in the depleted region after diffusion from the undepleted bulk. Since charge is promptly collected by drift, it is expected that these detectors will be radiation harder than monolithic detectors where collection is by diffusion only. Edge-TCT measurements of unirradiated and neutron irradiated 1$\times$10$^{15}$, 7 $\times$10$^{15}$ and 2 $\times$10$^{16}$ n$_{eq}$/cm$^{2}$ samples were conducted. They show a charge collection degradation (preliminary) of $\approx$10% for 7 $\times$10$^{15}$ and 50% for 2 $\times$10$^{16}$ n$_{eq}$/cm$^{2}$ (reference measured at room T, irradiated measured at 0$^{\circ}$C).

Primary authors

Constantin Weisser (CERN) Daniel Muenstermann (Universite de Geneve (CH)) Marcos Fernandez Garcia (Universidad de Cantabria (ES))


Christian Gallrapp (CERN) Hannes Neugebauer (Hamburg University (DE)) Michael Moll (CERN)

Presentation materials