25th RD50 Workshop (CERN)

Speaker List

• Christopher Betancourt (Albert-Ludwigs-Universitaet Freiburg (DE))
  • Speaker at

    Long-term HV stability of the collected charge in charge multiplication sensors

• Marco Bomben (Lab. Phys. Nucl. Hautes Energies (FR))
  • Speaker at

    The RD50 testbeam

• Luis Alexandre Borralho Marinho (University of Aveiro (PT))
  • Speaker at

    Registration

• Nicolo Cartiglia (Universita e INFN (IT))
  • Speaker at

    First results on the timing resolution properties of LGAD

• Gianluigi Casse (University of Liverpool (GB))
  • Speaker at

    Comparison of pixel detecftors AC and DC coupled to FE-I4 readout

• Emanuele Cavallaro (Universitat Autònoma de Barcelona (ES))
  • Speaker at

    Measurements on segmented LGAD devices

• Esteban Curras Rivera (Universidad de Cantabria (ES))
  • Speaker at

    Characterization after neutron irradiation of Silicon Diodes for the CMS High Granular Calorimeter (HGCAL)

• Ranjeet Dalal (University of Delhi)
  • Speaker at

    TCAD simulations of irradiated silicon sensors (Vidyo)

• Pablo De Castro Manzano (Universidad de Cantabria (ES))
  • Speaker at

    TRACS: Transient Current Simulator

• Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)
  • Speaker at

    Discussion on TCAD

• Vitaliy Fadeyev (University of California,Santa Cruz (US))
  • Speaker at

    Study of Low-dose Radiation Resistance of Sidewall Passivation on p-type SCP Devices

• Marcos Fernandez Garcia (Universidad de Cantabria (ES))
  • Speaker at

    Edge-TCT characterization of irradiated HV-CMOSv3 sensors

• Pablo Fernández-Martínez (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
  • Speaker at

    Design and Fabrication of an Optimal Peripheral Region for the LGAD

• David Flores (Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
  • Speaker at

    New Technological Capabilities at CNM

• Andreas Justin Gisen (Technische Universitaet Dortmund (DE))
  • Speaker at

    Investigation of highly irradiated n+-in-n planar ATLAS pixel sensors

• Vagelis Gkougkousis (Laboratoire de l'Accelerateur Lineaire (FR))
  • Speaker at

    Dopping profile Simulations and measurements

• Maurice Glaser (CERN)
  • Speaker at

    The new IRRAD facility at CERN

• Virginia Greco (Instituto de Fisica Corpuscular (ES))
  • Speaker at

    Discussion on LGAD and Fast Timing

• Alexandra Junkes (Hamburg University (DE))
  • Speaker at

    Bulk defect investigations for proton irradiated sensors

• Pawel Kaminski (Institute of Electronic Materials Technology)
  • Speaker at

    First results on properties and concentrations of radiation defect centers in nitrogen-enriched, high-resistivity FZ silicon

• Ioannis Kopsalis (University of Hamburg)
  • Speaker at

    Investigation of the insulator layers for segmented silicon sensors before and after X-ray irradiation

• Gregor Kramberger (Jozef Stefan Institute (SI))
  • Speaker at

    Discussion on Full Detector Systems

  • Speaker at

    Edge-TCT studies of irradiated HVCMOS sensor (an update)

  • Speaker at

    Effects of irradiation on LGAD devices with high excess current

• Susanne Kuehn (Albert-Ludwigs-Universitaet Freiburg (DE))
  • Speaker at

    Long-term HV stability of the collected charge in charge multiplication sensors

• Michael Kwestarz (Topsil Semiconductor Materials SA, 133 Wolczynska St., 01-919 Warsaw, Poland)
  • Speaker at

    Nitrogen impact on vacancy aggregation in silicon single crystals

• Leonid Makarenko (Byelorussian State University (BY))
  • Speaker at

    MODELING OF DLTS RESPONSE FOR SILICON DIODES WITH SPHERICAL AND ELLIPSOIDAL DEFECT CLUSTERS

• Igor Mandić (Jožef Stefan Institute)
  • Speaker at

    E-TCT with laser beam directed parallel to strips

• Jessica Metcalfe (Brookhaven National Laboratory (US))
  • Speaker at

    Potential of Thin Films for use in Charged Particle Tracking Detectors

• Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))
  • Speaker at

    Surface Properties of Proton and Gamma Irradiated End-Cap Strip Mini Sensors

• Marko Mikuz (Jozef Stefan Institute (SI))
  • Speaker at

    Electric field and mobility in extremely irradiated silicon

• Michael Moll (CERN)
  • Speaker at

    Discussion on HVCMOS and TCT techniques

  • Speaker at

    Welcome

• Fco. Rogelio Palomo Pinto (School of Engineering, University of Sevilla)
  • Speaker at

    Two Photon Absorption and carrier generation in semiconductors

• Botho Albrecht Paschen (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
  • Speaker at

    Characterization of thin n-in-p planar pixel sensors and status of the new active edge pixel production

• Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))
  • Speaker at

    TCAD simulated surface damage in proton irradiated strip sensors: Investigation of interface traps vs non-uniform 3-level model

• Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
  • Speaker at

    Discussion on Defect and Material Characterization

  • Speaker at

    Point and extended defects in silicon induced by electron irradiation – dependence on the particle energy

• Hartmut Sadrozinski (SCIPP, UC santa Cruz)
  • Speaker at

    Measurements on thin LGAD Sensors

• Hartmut Sadrozinski (University of California,Santa Cruz (US))
  • Speaker at

    Announcement: Trento Worskhop

• Miguel Ullan Comes (Instituto de Fisica Corpuscular (ES))
  • Speaker at

    Alternative technologies for Low Resistance Strip Sensors at CNM

• Juozas Vaitkus (Vilnius University)
  • Speaker at

    Photoconductivity spectra as a tool for Si material stability control.

• Juozas Vaitkus (Vilnius University (LT))
  • Speaker at

    Mobility in irradiated silicon

• Ivan Vila Alvarez (Universidad de Cantabria (ES))
  • Speaker at

    TPA-TCT: A novel Transient Current Technique based on the Two Photon Absorption (TPA) process

• Veronique Wedlake (CERN)
  • Speaker at

    Registration

• Constantin Weisser (University of Manchester (GB))
  • Speaker at

    An Introduction to Edge-TCT measurements on irradiated HV-CMOSv3 sensors

• Tobias Wittig (CIS Institut fuer Mikrosensorik GmbH (DE))
  • Speaker at

    Ongoing activities at CiS

• Sven Wonsak (University of Liverpool (GB))
  • Speaker at

    Signal and Charge Collection Efficiency of n-in-p strip detectors after proton and neutron irradiation to HL-LHC fluences

  • Speaker at

    Status of Silicon Strip Sensor Measurements at Liverpool