Nov 19 – 21, 2014
Europe/Zurich timezone

Characterization of thin n-in-p planar pixel sensors and status of the new active edge pixel production

Nov 19, 2014, 1:55 PM
500/1-001 - Main Auditorium (CERN)

500/1-001 - Main Auditorium


503-1-001 (Council Chamber) on 19th Nov ; 500-1-001(Main auditorium) on 20th in the morning and 4-3-006 (TH auditorium) in the afternoon; 500-1-001(Main auditorium) on 21st Nov.
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Botho Albrecht Paschen (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)


N-in-p planar pixel sensors with an active thickness of 200 μm produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips and irradiated in Ljubljana, Los Alamos and KIT up to a fluence of 1.4×10^{16} n_{eq}/cm^2. Charge collection properties and tracking efficiencies are studied to investigate their possible applications in the inner layers of the ATLAS pixel detectors at HL-LHC. An update on the status of the new production of active edge pixels at ADVACAM is given.

Presentation materials