Nov 19 – 21, 2014
Europe/Zurich timezone

Edge-TCT studies of irradiated HVCMOS sensor (an update)

Nov 20, 2014, 9:40 AM
500/1-001 - Main Auditorium (CERN)

500/1-001 - Main Auditorium


503-1-001 (Council Chamber) on 19th Nov ; 500-1-001(Main auditorium) on 20th in the morning and 4-3-006 (TH auditorium) in the afternoon; 500-1-001(Main auditorium) on 21st Nov.
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Gregor Kramberger (Jozef Stefan Institute (SI))


A HVCMOS sensor (HVCMOS2FEI4) was investigated before and after the irradiation with Edge-TCT. Key properties of the charge collection in p substrate were determined by different analysis methods. It was found that diffusion contribution to the the charge collection is reduced, but the depleted region is not affected much after relatively low fluences of up to 5e14 neq/cm2.

Primary author

Gregor Kramberger (Jozef Stefan Institute (SI))

Presentation materials