Nov 19 – 21, 2014
Europe/Zurich timezone

Alternative technologies for Low Resistance Strip Sensors at CNM

Nov 21, 2014, 11:10 AM
500/1-001 - Main Auditorium (CERN)

500/1-001 - Main Auditorium


503-1-001 (Council Chamber) on 19th Nov ; 500-1-001(Main auditorium) on 20th in the morning and 4-3-006 (TH auditorium) in the afternoon; 500-1-001(Main auditorium) on 21st Nov.
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Dr Miguel Ullan Comes (Instituto de Fisica Corpuscular (ES))


Results from the newly fabricated Low Resistance (LowR) Strip Sensors will be presented. In this third batch fabricated at CNM-Barcelona, new technological solutions have been implemented to obtain the needed low resistivity in the strips in order to obtain a full protection versus beam losses. As a first technological alternative, a Titanium Silicide (TiSi2) layer has been created on top of the silicon implant to create a low resistance path along the strip. In the second alternative, a highly doped polysilicon layer has been deposited on the strip, also to obtain a low resistance path. The tests show that the sensors are working satisfactorily, and that the low resistance along the strip has been achieved with strip resistances around 1.5 kOhms for the TiSi2 sensors, and 1.8 kOhms for the poly sensors. This suppose more than one order of magnitude reduction in the strip resistivity, which indicates that the additional protection from beam losses will be also achieved with these solutions. This will have to be confirmed with laser tests.

Primary author

Dr Miguel Ullan Comes (Instituto de Fisica Corpuscular (ES))


Alex Grillo (University of California,Santa Cruz (US)) Giulio Pellegrini (Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES)) Hartmut Sadrozinski (SCIPP, UC santa Cruz) Dr Josep Montserrat (CNM-Barcelona) Manuel Lozano Fantoba (Instituto de Fisica Corpuscular (ES)) Mr Miguel Zabala (CNM-Barcelona) Mrs Oihane Beldarrain (CNM-Barcelona) Victor Hugo Benitez Casma (Instituto de Fisica Corpuscular (ES)) Vitaliy Fadeyev (University of California,Santa Cruz (US))

Presentation materials