Nov 19 – 21, 2014
Europe/Zurich timezone

Point and extended defects in silicon induced by electron irradiation – dependence on the particle energy

Nov 19, 2014, 10:20 AM
500/1-001 - Main Auditorium (CERN)

500/1-001 - Main Auditorium


503-1-001 (Council Chamber) on 19th Nov ; 500-1-001(Main auditorium) on 20th in the morning and 4-3-006 (TH auditorium) in the afternoon; 500-1-001(Main auditorium) on 21st Nov.
Show room on map


Dr Ioana Pintilie (NIMP Bucharest-Magurele, Romania)


The defect formation, from point defects to clusters, is scanned by performing irradiation with electrons of five different energies ranging from 1.5 MeV to 27 MeV. The radiation damage induced by electrons has been investigated in terms of radiation induced defects, their evolution in time and impact on the electrical performance of silicon diodes. Our investigations demonstrate that extended defects start to form already for electrons with energy of 1.5 MeV. The direct impact of the trivacancy (V3) defect on the leakage current is confirmed. From this correlation, the capture cross section for holes of the V3 center in the single acceptor state is determined.In addition, similar to V3 small cluster, there are indications that there are other cluster related defects (the H centers) changing their configuration at ambient temperature and influencing the Neff. Preliminary results obtained by EPR and HRTEM will be presented as well.

Primary author

Dr Ioana Pintilie (NIMP Bucharest-Magurele, Romania)

Presentation materials