Speaker
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
Description
Recent developments in the simulation work group suggest the possibility to reproduce the experimentally observed surface properties of
proton irradiated silicon strip sensors by the implementation of interface traps at the Si/SiO2 interface. This could offer an alternative for
the non-uniform 3-level model applied in Synopsys Sentaurus package, where a shallow acceptor level is added to the two deep levels of the proton
model (tuned by R. Eber from the PTI-model) exclusively close to the device surface (e.g. 2 $\mu$m). A study of the position dependency simulations of
CCE, that also provide strip isolation information via observed charge sharing, and interstrip capacitance between the two approaches and measurements
from test beam for the fluence range $3\times10^{14}-1.4\times10^{15}$ n$_{\textrm{eq}}$ cm$^{-2}$ will be presented. Also first simulations of the hit position dependency of the signal in a $3\textrm{D}$ double-column sensor will be discussed.
Author
Timo Hannu Tapani Peltola
(Helsinki Institute of Physics (FI))
Co-author
Jasu Haerkoenen
(Helsinki Institute of Physics (FI))