Nov 19 – 21, 2014
Europe/Zurich timezone

Investigation of highly irradiated n+-in-n planar ATLAS pixel sensors

Nov 19, 2014, 2:15 PM
500/1-001 - Main Auditorium (CERN)

500/1-001 - Main Auditorium


503-1-001 (Council Chamber) on 19th Nov ; 500-1-001(Main auditorium) on 20th in the morning and 4-3-006 (TH auditorium) in the afternoon; 500-1-001(Main auditorium) on 21st Nov.
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Andreas Justin Gisen (Technische Universitaet Dortmund (DE))


Several FE-I3 sized n$^+$-in-n single chip sensors have been irradiated to fluences up to $2 \cdot 10^{16} n_{eq}/cm^2$ which may possibly be reached in the inner ATLAS pixel layers in HL-LHC. To determine the scaling behaviour, the leakage current was measured depending on the voltage or on the temperature for individual sensors. In addition to these measurements an FE-I3 n$^+$-in-n single chip assembly irradiated to a fluence of $2 \cdot 10^{16} n_{eq}/cm^2$ was annealed in small steps to an overall time of 700 \,min at $ 60\,^{\circ}\mathrm{C} $. The impact on the leakage current and the collected charge was characterized. The results obtained from this two studies are presented.

Primary author

Andreas Justin Gisen (Technische Universitaet Dortmund (DE))

Presentation materials