Nov 19 – 21, 2014
Europe/Zurich timezone

TCAD simulations of irradiated silicon sensors (Vidyo)

Nov 21, 2014, 9:00 AM
500/1-001 - Main Auditorium (CERN)

500/1-001 - Main Auditorium


503-1-001 (Council Chamber) on 19th Nov ; 500-1-001(Main auditorium) on 20th in the morning and 4-3-006 (TH auditorium) in the afternoon; 500-1-001(Main auditorium) on 21st Nov.
Show room on map


Ranjeet Dalal (University of Delhi)


The TCAD modeling of radiation damage for the silicon sensors not only provides understanding of the radiation damage, it is also helpful in the sensor design optimization. But radiation damage simulation of silicon sensors must be carried out by simultaneous incorporation of appropriate bulk and surface damages since both the strip and pixel sensors undergo these degrading effects. The use of either bulk damage or surface damage only can lead to wrong conclusions. In this work, simulations of irradiated silicon sensors incorporating the bulk and surface damages, using Silvaco TCAD, are discussed. The bulk damage is parameterized by two trap model while the surface damage is incorporated in the simulations using oxide charge density (QF) and interface trap density (Nit).

Primary author

Ranjeet Dalal (University of Delhi)

Presentation materials