Speaker
Ivan Lopez Paz
(IFAE Barcelona)
Description
Highly segmented (50x50 µm²) silicon sensors imply a challenge on the forward regions of the tracker (high-ŋ). Although under such conditions the total charge deposited is large, due to the high segmentation, the charge deposited per pixel is ~3.3ke along the 50 µm pitch pixel (1-2 times the typical threshold in an FE-I4 chip). This low charge collection could lead to high pixel inefficiencies and cluster splitting, reducing and biasing the spatial resolution of the tracker.
Structures with 50x50 µm² pixels are not yet available for testbeam studies, so standard FE-I4 compatible 3D sensors with pixel pitch 50x250 µm² were studied under high incidence angle (80º) with respect to the short pixel direction in order to investigate the behaviour of small-sized pixels in the forward region of the tracker. Per pixel efficiency (as opposed to the standard hit efficiency per cluster) and charge collection along large clusters of IBL-like CNM and FBK 3D designs are studied before and after irradiation.
Authors
Mr
David Vazquez Furelos
(IFAE - Barcelona (ES))
Emanuele Cavallaro
(IFAE - Barcelona (ES))
Ivan Lopez Paz
(IFAE Barcelona)
Joern Lange
(IFAE Barcelona)
Sebastian Grinstein
(IFAE - Barcelona (ES))
