Speaker
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
Description
Radiation hardness of HVCMOSv3 to neutron irradiation was studied by using edge-TCT. The fluence range covered was 0, 1e15, 7e15 and 2e16 neq/cm-2. A test diode providing analog signal was readout using a fast current amplifier. The detector was mounted on a very simple PCB which allowed for a clean signal readout. Results on charge collection and depletion width are presented. Due to the very low resistivity of the substrate (10 Ohm.cm) the active region thickness is smaller than the beam width. A first attempt to calculate the true active thickness was essayed.
Author
Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
