Speaker
Eugenijus Gaubas
(Vilnius university)
Description
Results on research of fluence dependent carrier lifetime variations in pion irradiated and annealed Si will be reported. Profiles of carrier lifetime lateral variation in the as–irradiated p- and n-Si wafer fragments are to be illustrated. The obtained carrier lifetime variations are discussed.
Primary author
Eugenijus Gaubas
(Vilnius university)
Co-authors
Blerina Gkotse
(Université Européenne de Bretagne UEB (FR))
Christian Gallrapp
(CERN)
Federico Ravotti
(CERN)
Mr
Jevgenij Pavlov
(Vilnius University)
Juozas Vaitkus
(Vilnius University)
Maurice Glaser
(CERN)
Michael Moll
(CERN)
Dr
Tomas Ceponis
(Vilnius University)
