2–4 Dec 2015
CERN
Europe/Zurich timezone

Session

CMOS sensors and Sensor Producers

2 Dec 2015, 14:20
6/2-024 - BE Auditorium Meyrin (CERN)

6/2-024 - BE Auditorium Meyrin

CERN

6-2-024
114
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  1. Marcos Fernandez Garcia (Universidad de Cantabria (ES))
    02/12/2015, 14:20
    Standard (20 min including discussion)
    High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10$\Omega\cdot\mathrm{cm}$ were irradiated with 24 GeV/c protons up to a fluence of 7$\times$10$^{15}$ n$_{eq}$/cm$^2$ and thermal neutrons up to a fluence of 2$\times$10$^{16}$ n$_{eq}$/cm$^2$. The detectors were characterized using edge-TCT. Both, the collected charge and...
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  2. Igor Mandic (Jozef Stefan Institute (SI))
    02/12/2015, 14:40
    Standard (20 min including discussion)
    TCT measurements with focused laser beam were recently made with test structures from different producers of HV-CMOS detectors. The test structures are processed on substrate with different resistivities. In this contribution we will compare TCT measurements with these structures before and after irradiation.
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  3. Francisco Rogelio Palomo Pinto (Universidad de Cantabria (ES))
    02/12/2015, 15:00
    Standard (20 min including discussion)
    Where we present some TCAD simulatinos on HV-CMOS 350 nm AMS, in order to assist the comparison with measurements.
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  4. Marco Bomben (Centre National de la Recherche Scientifique (FR))
    02/12/2015, 15:50
    Standard (20 min including discussion)
    I will present preliminary results from simulated LGAD devices, before and after irradiation. Electrical properties and response to MIPs and alpha particles will be discussed, as a function of irradiation fluences, polarization voltage and device temperature.
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  5. Gianluigi Casse (University of Liverpool (GB))
    02/12/2015, 16:10
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