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Marcos Fernandez Garcia (Universidad de Cantabria (ES))02/12/2015, 14:20Standard (20 min including discussion)High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process, with a substrate resistivity of 10$\Omega\cdot\mathrm{cm}$ were irradiated with 24 GeV/c protons up to a fluence of 7$\times$10$^{15}$ n$_{eq}$/cm$^2$ and thermal neutrons up to a fluence of 2$\times$10$^{16}$ n$_{eq}$/cm$^2$. The detectors were characterized using edge-TCT. Both, the collected charge and...Go to contribution page
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Igor Mandic (Jozef Stefan Institute (SI))02/12/2015, 14:40Standard (20 min including discussion)TCT measurements with focused laser beam were recently made with test structures from different producers of HV-CMOS detectors. The test structures are processed on substrate with different resistivities. In this contribution we will compare TCT measurements with these structures before and after irradiation.Go to contribution page
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Francisco Rogelio Palomo Pinto (Universidad de Cantabria (ES))02/12/2015, 15:00Standard (20 min including discussion)Where we present some TCAD simulatinos on HV-CMOS 350 nm AMS, in order to assist the comparison with measurements.Go to contribution page
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Marco Bomben (Centre National de la Recherche Scientifique (FR))02/12/2015, 15:50Standard (20 min including discussion)I will present preliminary results from simulated LGAD devices, before and after irradiation. Electrical properties and response to MIPs and alpha particles will be discussed, as a function of irradiation fluences, polarization voltage and device temperature.Go to contribution page
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Gianluigi Casse (University of Liverpool (GB))02/12/2015, 16:10
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