Marcos Fernandez Garcia
(Universidad de Cantabria (ES))
02/12/2015, 14:20
Standard (20 min including discussion)
High voltage CMOS detectors (HVCMOSv3), fabricated in the ams H18 high voltage process,
with a substrate resistivity of 10$\Omega\cdot\mathrm{cm}$ were irradiated with 24 GeV/c protons up to a fluence of 7$\times$10$^{15}$ n$_{eq}$/cm$^2$ and thermal neutrons up to a fluence of 2$\times$10$^{16}$ n$_{eq}$/cm$^2$. The detectors were
characterized using edge-TCT. Both, the collected charge and...
Igor Mandic
(Jozef Stefan Institute (SI))
02/12/2015, 14:40
Standard (20 min including discussion)
TCT measurements with focused laser beam were recently made with test structures from different producers of HV-CMOS detectors. The test structures are processed on substrate with different resistivities. In this contribution we will compare TCT measurements with these structures before and after irradiation.
Francisco Rogelio Palomo Pinto
(Universidad de Cantabria (ES))
02/12/2015, 15:00
Standard (20 min including discussion)
Where we present some TCAD simulatinos on HV-CMOS 350 nm AMS, in order to assist the comparison with measurements.
Marco Bomben
(Centre National de la Recherche Scientifique (FR))
02/12/2015, 15:50
Standard (20 min including discussion)
I will present preliminary results from simulated LGAD devices, before and after irradiation.
Electrical properties and response to MIPs and alpha particles will be discussed,
as a function of irradiation fluences, polarization voltage and device temperature.
Gianluigi Casse
(University of Liverpool (GB))
02/12/2015, 16:10
