TWEPP 2016 - Topical Workshop on Electronics for Particle Physics

Session

Radiation tolerant components and systems

Radiation

29 Sept 2016, 14:50

Conveners

Radiation tolerant components and systems

• Salvatore Danzeca (CERN)

133. Application of flash-based field-programmable gate arrays in high energy experiments

Yuta Sano (Nagoya University (JP))

29/09/2016, 14:50

Radiation

Oral

Field-programmable gate arrays (FPGAs) based on flash memories provide a high radiation tolerance. We discuss potential application of the Microsemi IGLOO2 FPGAs in high energy experiments. We implement a 24 channel time-to-digital converter with a time binning of 0.78 ns and evaluate the performance. The time resolution is obtained to be 0.25 ns. The radiation tolerance against total ionizing...

137. Total Ionizing Dose effects on a 28nm Hi-K metal-gate CMOS technology up to 1 Grad

Serena Mattiazzo (University of Padova (IT))

29/09/2016, 15:15

Radiation

Oral

This paper presents the results of an irradiation campaign up to 1 Grad on single transistors manufactured in a 28nm commercial CMOS technology. This technology is of interest for future upgrades for HL-LHC. NMOS transistors have been irradiated and electrical parameters have been measured. Moderate threshold voltage shift and sub-threshold slope degradation have been observed, while leakage...

63. First studies on AMS H35 CMOS devices for application in the ATLAS tracker upgrade

Emanuele Cavallaro (IFAE - Barcelona (ES))

29/09/2016, 15:40

Radiation

Oral

H35Demo chips are HV-CMOS devices produced in the 350nm AMS technology with the purpose of inquiring the opportunity to introduce this technology in the next ATLAS tracker upgrade. Each chip includes four different pixel matrices and three test structures. The results of TCT (Transient Current Technique) and edge-TCT analysis on the test structures from with different substrate resistivity...