Speaker
Kazuhiko Hara
(University of Tsukuba)
Description
The SOI technology is very attractive realizing high-performance monolithic pixel devices. The TID tolerance has been a mojor issue in applicatons, as the positive charges accumulated in the oxide layers deteriorate the performance of the nearby FETs. With use of the innovative double-SOI, the TID effect is shown to be compensated by applying negative voltages to the middle layer. We fabricated a pixel sensor for demonstration and succeeded in operating the pixel device irradiated up to 1 MGy.
Primary authors
Kazuhiko Hara
(University of Tsukuba)
Wataru Aoyagi
(University of Tsukuba)
Shun Endo
(University of Tsukuba)
Hiroki Yamauchi
(university of Tsukuba)
Ryuhei Abe
(University of tsukuba)
Shikie iwanami
(University of Tsukuba)
Toru Tsuooyama
(KEK)
Ysuo Arai
(KEK)
Ikuo Kurachi
(KEK)
Toshinobu Miyoshi
(KEK)
Miho Yamada
(KEK)
Shunsuke Honda
(University of Tsukuba (JP))
