Speaker
Prof.
Yasuo Arai
(High Energy Accelerator Research Organization (JP))
Description
Silicon-On-Insulator (SOI) technology is considered to have the most suitable structure for a monolithic pixel detector. It achieved many important performance: less than 1 micron tracking resolution, good energy resolution with 10 electron noise level, radiation hardness of more than 100 kGy(Si), small layout size with PMOS and NMOS active merge, etc.
Overview of the SOI pixel process and detector development will be presented.
Primary author
Prof.
Yasuo Arai
(High Energy Accelerator Research Organization (JP))