11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan

High Resolution SOI Pixel Detector

11 Dec 2017, 15:20

30m

Conference Center (Okinawa Institute of Science and Technology Graduate University (OIST))

ORAL SOI detectors Session3

Speaker

Prof. Yasuo Arai (High Energy Accelerator Research Organization (JP))

Description

Silicon-On-Insulator (SOI) technology is considered to have the most suitable structure for a monolithic pixel detector. It achieved many important performance: less than 1 micron tracking resolution, good energy resolution with 10 electron noise level, radiation hardness of more than 100 kGy(Si), small layout size with PMOS and NMOS active merge, etc.
Overview of the SOI pixel process and detector development will be presented.

Presentation materials

1712OIST_arai_open.pdf