Speaker
Igor Mandic
(Jozef Stefan Institute (SI))
Description
New results of E-TCT and Sr90 measurements with CMOS detectors produced on substrates with different resistivities will be presented. With Edge-TCT method the thickness of depleted layer can be estimated and its dependence on irradiation flunece was studied. Collected charge deposited by MIPs from Sr90 source in passive CMOS detectors was measured with external amplifier. The dependence of collected charge on fluence will be presented and compared to E-TCT measurements.
Author
Igor Mandic
(Jozef Stefan Institute (SI))
