29th RD50 Workshop (CERN)

Session

CMOS sensors

21 Nov 2016, 10:15

6/2-024 - BE Auditorium Meyrin (CERN)

8. New results of measurements with irradiated CMOS detectors in Ljubljana

Igor Mandic (Jozef Stefan Institute (SI))

21/11/2016, 10:15

New results of E-TCT and Sr90 measurements with CMOS detectors produced on substrates with different resistivities will be presented. With Edge-TCT method the thickness of depleted layer can be estimated and its dependence on irradiation flunece was studied. Collected charge deposited by MIPs from Sr90 source in passive CMOS detectors was measured with external amplifier. The dependence of...

15. Two Photon edge-TCT measurements of a neutron irradiated HVCMOS

Marcos Fernandez Garcia (Universidad de Cantabria (ES))

21/11/2016, 10:35

First Two Photon edge-TCT measurements of an HVCMOSv3 (ams 180 nm) irradiated with neutrons to a fluence of 7e15 neq/cm2 will be presented. The superior spatial resolution of TPA allows to accurately calculate the depletion width and effective doping concentration of the bulk. We attempt to profile the electric field inside the detector, including its distribution inside the Deep Implant. We...

35. Edge-TCT studies of irradiated HV-CMOS sensors and first test beam results with monolithic H35demo chips

Stefano Terzo (IFAE Barcelona (ES))

21/11/2016, 10:55

The H35Demo is a large area High-Voltage CMOS demonstrator chip for tracking at LHC experiments. It is produced at the AMS foundry in 0.35 µm technology on wafers with resistivity ranging from 20 to 1000 Ohm cm.
Each chip includes two monolithic matrices using nMOS or CMOS transistors and 3x3 pixel test structures without electronics for sensor characterisations. H35demo samples of different...

38. Discussion session: CMOS & RD50 CMOS project

Gianluigi Casse (University of Liverpool (GB))

21/11/2016, 11:15

Discussion of RD50 CMOS activity planing