For conventional planar strip sensors the interstrip resistance was observed to have a significant variation with ionizing dose and operational temperature. In principle, it could become low enough to result in lateral charge spread across several strips leading to signal loss and deterioration of the positional resolution. There are two aspects of such evaluation that can be improved: 1) The...
The extremely harsh radiation environment of the future trackers necessitates the upgrade of the existing silicon detector technologies. The LGAD detectors, based on their internal charge multiplication mechanism, have attracted a lot of interest in the silicon detector community. However, it has been reported that a rapid decrease in the LGAD gain with irradiation is limiting these devices...
The dependencies of the collected charge versus bias voltage and fluence for LGADs are calculated to fit experimental data. The calculations are based on two models of radiation degradation in Si detectors previously developed at the Ioffe Institute and adapted to the LGAD structure: 1) a model of two effective energy levels of radiation-induced defects responsible for the electric field...
The future upgrading of detectors for the high luminosity colliders requests the detectors that are capable work in the conditions where fluence of neutrons exceeds 1e17 cm-2 (e.g., the forward callorimeter in CMS). We make an attempt to investigate the possibilities of GaN detectors that works at room and higher temperature.
The dynamic characteristics of the GaN p-i-n avalanche...
In this talk I will present recent results from TCAD simulations using Silvaco tools.
In particular I will focus on p-bulk sensors, both standard diodes and LGADs.
At the beginning I will present a comparison of two radiation damage models for the bulk (Perugia, New Delhi).
Then I will comment on the impact of radiation damage model parameters uncertainties on macroscopic observables....
For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiment, the estimated equivalent neutron fluence after 3000 fb$^{-1}$ is 2$\cdot$10$^{16}$ n$_{eq}$/cm$^{-2}$, and the IEL (Ionizing Energy Loss) dose
in the SiO$_2$ is 5 MGy. The optimization of the pixel sensors and the understanding of...
