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Vitaliy Fadeyev (University of California,Santa Cruz (US))22/11/2016, 14:00
For conventional planar strip sensors the interstrip resistance was observed to have a significant variation with ionizing dose and operational temperature. In principle, it could become low enough to result in lateral charge spread across several strips leading to signal loss and deterioration of the positional resolution. There are two aspects of such evaluation that can be improved: 1) The...
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Julio Calvo Pinto (CERN)22/11/2016, 14:20
We present a new software that aims to calculate the effective space charge distribution of a silicon detector. The software uses TRACS (TRAnsient Current Simulator) to simulate the induced transients currents in a detector under edge-TCT illumination. Inside TRACS a Neff(z) profile is assumed. The parameters of the profile are extracted from a fit of measured transient currents to the...
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Ashutosh Bhardwaj (University of Delhi (IN))22/11/2016, 14:40
The extremely harsh radiation environment of the future trackers necessitates the upgrade of the existing silicon detector technologies. The LGAD detectors, based on their internal charge multiplication mechanism, have attracted a lot of interest in the silicon detector community. However, it has been reported that a rapid decrease in the LGAD gain with irradiation is limiting these devices...
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Dr Elena Verbitskaya (Ioffe Institute)22/11/2016, 15:00
The dependencies of the collected charge versus bias voltage and fluence for LGADs are calculated to fit experimental data. The calculations are based on two models of radiation degradation in Si detectors previously developed at the Ioffe Institute and adapted to the LGAD structure: 1) a model of two effective energy levels of radiation-induced defects responsible for the electric field...
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Juozas Vysniauskas (Vilnius University (LT))22/11/2016, 15:20
The future upgrading of detectors for the high luminosity colliders requests the detectors that are capable work in the conditions where fluence of neutrons exceeds 1e17 cm-2 (e.g., the forward callorimeter in CMS). We make an attempt to investigate the possibilities of GaN detectors that works at room and higher temperature.
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The dynamic characteristics of the GaN p-i-n avalanche... -
Marco Bomben (Centre National de la Recherche Scientifique (FR))22/11/2016, 16:10
In this talk I will present recent results from TCAD simulations using Silvaco tools.
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In particular I will focus on p-bulk sensors, both standard diodes and LGADs.
At the beginning I will present a comparison of two radiation damage models for the bulk (Perugia, New Delhi).
Then I will comment on the impact of radiation damage model parameters uncertainties on macroscopic observables.... -
Francisco Rogelio Palomo Pinto (Universidad de Sevilla (ES))22/11/2016, 16:30
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22/11/2016, 16:50
There has been a growing interest for the relatively higher bulk doping density (10^13 cm^(-3) to 2x10^14 cm^(-3)) Si sensors due to their better ability for internal charge multiplication and hence higher charge collection efficiency. The CMOS, APD and LGAD are some of the examples having high bulk doping density (or low resistivity) sensors. However, there has not been a detailed...
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Joern Schwandt (Hamburg University (DE))22/11/2016, 17:10
For the high-luminosity phase of the Large Hadron Collider (HL-LHC), at the expected position of the innermost pixel detector layer of the CMS and ATLAS experiment, the estimated equivalent neutron fluence after 3000 fb$^{-1}$ is 2$\cdot$10$^{16}$ n$_{eq}$/cm$^{-2}$, and the IEL (Ionizing Energy Loss) dose
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in the SiO$_2$ is 5 MGy. The optimization of the pixel sensors and the understanding of... -
22/11/2016, 17:30
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