Dr
Gabriela Borin Barin
(nanotech@surfaces Laboratory, Empa – Dübendorf, Switzerland)
A bottom-up approach allows for the synthesis of ultra-narrow graphene nanoribbons (GNR) with a sizeable bandgap and thus excellent candidates for switching applications. In this work we focused on 5- and 9-atom wide armchair GNRs (5-AGNR, 9-AGNR) grown under UHV conditions on Au(111) and Au(788) surfaces. GNRs were transferred using two different transfer approaches and for both 5- and 9-AGNRs Raman spectra indicated no significant degradation upon transfer as well as remarkable stability overtime. Detailed characterization of both transfers’ will be addressed. In a next step, 9AGNR-FET devices were produced using graphene electrodes, with a channel length of 1-5nm. A performance of Ion > 6μA at Vd = 0.1 V and high Ion/Ioff ratios of ~10^4 was observed
Dr
Gabriela Borin Barin
(nanotech@surfaces Laboratory, Empa – Dübendorf, Switzerland)
Ms
Maria El Abassi
(Transport at Nanoscale interfaces lab - Empa)
Mr
Juan Pablo Llinas
(Dept of Electrical Eng. and Comp. Sciences, UC Berkeley, USA)
Mr
Jan Overbeck
(Transport at Nanoscale Interfaces laboratory - Empa)
Dr
Liangbo Liang
(Center for Nanophase Materials Sciences, Oak Ridge National Lab, Oak Ridge, USA)
Dr
Akimitsu Narita
(Max Planck Institute for Polymer Research, Mainz, Germany)
Prof.
Klaus Muellen
(Max Planck Institute for Polymer Research, Mainz, Germany)
Prof.
Michel Calame
(Transport at Nanoscale Interfaces lab - Empa)
Dr
Pascal Ruffieux
(Nanotech@surfaces lab - Empa)
Prof.
Vincent Meunier
(Dep of Physics, Appl Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, USA)
Prof.
Jeffrey Bokor
(Dept of Electrical Eng. and Comp. Sciences, UC Berkeley, USA)
Prof.
Roman Fasel
(Nanotech@surfaces lab - Empa)
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