28–31 Aug 2018
EPFL
Europe/Zurich timezone

【832】 Anomalous Nernst effect in Ir$_{22}$Mn$_{78}$/Co$_{20}$Fe$_{60}$B$_{20}$/MgO layers with perpendicular magnetic anisotropy

29 Aug 2018, 18:30
1h 30m
Salle polyvalente (EPFL)

Salle polyvalente

EPFL

Poster Magnetism and Spintronics at the Nanoscale Poster Session

Speaker

Mr Junfeng Hu (Fert Beijing Institute, School of Electronic and Information Engineering, BDBC, Beihang University)

Description

The anomalous Nernst effect in a perpendicularly magnetized Ir$_{22}$Mn$_{78}$/Co$_{20}$Fe$_{60}$B$_{20}$/MgO thin film is measured using well defined in-plane temperature gradients. The anomalous Nernst coefficient reaches 1.8 $\mu$V/K at room temperature, which is almost 50 times larger than that of a Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO thin film with perpendicular magnetic anisotropy. The anomalous Nernst and anomalous Hall results in different sample structures revealing that the large anomalous Nernst coefficient of the Ir$_{22}$Mn$_{78}$/Co$_{20}$Fe$_{60}$B$_{20}$/MgO thin film is related to the interface between CoFeB and IrMn. Moreover, a possible application of anomalous Nernst effect that takes advantage of the perpendicular magnetization to obtain large voltage, owing to the in-plane geometry of the device has been proposed.

Authors

Mr Junfeng Hu (Fert Beijing Institute, School of Electronic and Information Engineering, BDBC, Beihang University) Prof. Haiming Yu (Fert Beijing Institute, School of Electronic and Information Engineering, BDBC, Beihang University) Prof. Jean-Philippe Ansermet (Institute of Physics, Ecole Polytechnique Federale de Lausanne (EPFL))

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