Speaker
Description
The aim of the work is to develop a model which allows reliably predicting the effects of radiation damage by hadrons in segmented silicon sensors up to 1 MeV equivalent neutron fluences of $2\cdot 10^{16} \text{n}/\text{cm}^2$, which are expected at the High-Luminosity LHC for an integrated luminosity of $3000~\text{fb}^{-1}$. Recently we presented a model with five effective traps (Hamburg Penta-Trap Model, HPTM) which provides a good and consistent description of the effects by 24 GeV/c proton irradiation on pad diodes. The Optimiser of SYNOPSYS-TCAD has been used to determine the parameters of the five traps by ?minimisation of the differences between simulated and measured I-V, C-V and CCE$_{IR}$-V (Charge-Collection-Efficiency with infrared light). However, the I-V, C-V and CCE$_{IR}$-V data have only a limited sensitivity to the depth dependence of charge trapping, which is essential to predict the response of radiation-damaged segmented sensors, because of highly non-uniform weighting fields. Therefore we developed a simple method to incorporate the information gained by edge-on beam data of irradiated pixel sensor into the TCAD optimisation.
In the talk we will present the method how the position dependent induced charge is implemented in the TCAD optimisation, the results of the fits and the predictions are compared to the test beam results.