Speaker
Description
Currently, semiconductors with high atomic number Z arouse strong interest in construction of sensors with X-ray spectrum. The most prospective materials are presented by elements from the group АIIIBV. Gallium arsenide compensated with chromium (HR-GaAs:Cr) is one of these materials and exhibits unique characteristics. Sensors based on HR-GaAs:Cr demonstrate high efficiency. The response of HR-GaAs:Cr sensors to subnanosecond γ - and β - ray pulses of 25÷45 keV from accelerator of runaway electrons are described in this research. The samples have symmetric structure metal-semiconductor-metal. The active area of the samples was 6.25÷9 mm2 and the thickness of sensitive layer was 150÷500 µm. Experimental characteristics of pulses were compared with theoretical estimations. An optimal thickness of sensitive layer of HR-GaAs:Cr sensors was determined. This helps to obtain the highest possible value of speed-of-response ≤ 1ns.
The work was financially supported with grants of RSF # 18-44-06001 (TSU, Russia) and HRSF-0004 (DESY, Germany).
