Study of characterization, time resolution and proton hardness of IHEP-NDL LGAD sensors

Dec 14, 2019, 3:26 PM
1m
POSTER - Sun: B1F-Meeting room#3, B2F-RAN1/2; Mon-Wed: B1F Meeting rooms #5-6 (International Conference Center Hiroshima)

POSTER - Sun: B1F-Meeting room#3, B2F-RAN1/2; Mon-Wed: B1F Meeting rooms #5-6

International Conference Center Hiroshima

Peace Memorial Park, Hiroshima-shi
POSTER New ideas and future applications POSTER

Speaker

Yuzhen Yang (Chinese Academy of Sciences (CN))

Description

In view of the high-luminosity Large Hadron Collider (HL-LHC) upgrade, the ATLAS, CMS, RD50 collaborations are developing new irradiation-hard silicon sensors for precision timing measurements using Low gain avalanche diode (LGAD). In China, Novel Device Laboratory in Beijing (NDL) and IHEP have fabricated several batches of LGAD sensors. The basic characterization of IHEP-NDL LGAD sensors will be presented with leakage current measurement and sensor capacitance measurement. The time resolution is also studies using a pico-second laser test system setup in IHEP and electron beam test performed in DESY with 5 GeV electron beam. In order to study the proton radiation hardness, the bulk damage in IHEP-NDL LGAD sensors after proton irradiation is also presented. The proton irradiation is performing in China Institute of Atomic Energy (CIAE) using 100 MeV proton beam up to 4.5e15 neq/cm^2 or in CYRIC using 80 MeV proton beam up to 1e15 neq/cm^2.

Submission declaration Original and unpublished

Primary author

Yuzhen Yang (Chinese Academy of Sciences (CN))

Presentation materials