Indico has been upgraded to version 3.1. Details in the SSB

Depleted monolithic active pixel sensors in 180 nm TowerJazz and 150 nm LFoundry Technology

Dec 16, 2019, 11:20 AM
20m
Sun: B1F-Meeting rooms#4-6; Mon-Wed: B2F-RAN (International Conference Center Hiroshima)

Sun: B1F-Meeting rooms#4-6; Mon-Wed: B2F-RAN

International Conference Center Hiroshima

Peace Memorial Park, Hiroshima-shi
ORAL Pixel sensors for tracking Session6

Speaker

Christian Bespin (University of Bonn (DE))

Description

The planned upgrade of LHC leading to the High-Luminosity Large Hadron Collider (HL-LHC) imposes new requirements on the detectors in terms of particle rates and radiation. We have addressed these demands by developing depleted monolithic active pixel sensors (DMAPS) employing high resistivity substrates and high bias voltage at the same time. Full size pixel matrix prototypes with complete readout architecture have been designed and characterized, one employing a large electrode and one a small electrode approach in LFoundry 150 nm and TowerJazz 180 nm technology, respectively.

These prototypes, LF-Monopix and TJ-Monopix, use a column drain readout architecture. LF-Monopix is designed with a large charge collection electrode where readout electronics are placed inside which generally offers homogeneous electrical field in the sensor and short drift distances. TJ-Monopix employs a small charge collection electrode with separated readout electronics and an additional n-type implant to achieve full depletion of the sensitive volume.
This approach offers a low detector capacitance and smaller achievable pixel size at a low power consumption. Different flavors in both designs allow for a study of minor modifications in the pixel design.
The chips have been characterized with regard to their usage in high radiation environments like the future ATLAS ITk at HL-LHC.

In this talk, recent results from lab tests with radioactive sources and X-ray irradiations will be presented. Furthermore, an overview of ongoing work towards future chips in both CMOS technologies will be shown.

Submission declaration Original and unpublished

Primary author

Christian Bespin (University of Bonn (DE))

Co-authors

Alexandre Rozanov (CPPM, Aix-Marseille Université, CNRS/IN2P3 (FR)) Carlos Solans Sanchez (CERN) Cesar Augusto Marin Tobon (CERN) Enrico Junior Schioppa (CERN) Fabian Huegging (University of Bonn) Fabrice Guilloux (CEA/IRFU,Centre d'etude de Saclay Gif-sur-Yvette (FR)) Francisco Jose Iguaz Gutierrez (IRFU/CEA-Saclay) Hans Krueger (University of Bonn) Heinz Pernegger (CERN) Ivan Berdalovic (CERN) Ivan Dario Caicedo Sierra (University of Bonn (DE)) Jochen Christian Dingfelder (University of Bonn (DE)) Konstantinos Moustakas (University of Bonn (DE)) Leyre Flores Sanz De Acedo (University of Glasgow (GB)) Marlon B. Barbero (CPPM - CNRS/IN2P3 / Aix-Marseille Université (FR)) Maxence Vandenbroucke (CEA/IRFU,Centre d'etude de Saclay Gif-sur-Yvette (FR)) Norbert Wermes (University of Bonn (DE)) Patrick Breugnon (Centre National de la Recherche Scientifique (FR)) Patrick Pangaud (CPPM, Aix-Marseille Université, CNRS/IN2P3 (FR)) Petra Riedler (CERN) Philippe Schwemling (CEA/IRFU,Centre d'etude de Saclay Gif-sur-Yvette (FR)) Dr Pierre Barrillon (Aix Marseille Univ, CNRS/IN2P3, CPPM, Marseille, France) Piotr Rymaszewski (University of Bonn (DE)) Roberto Cardella (CERN) Siddharth Bhat (CPPM) Sinuo Zhang Stephanie Godiot (Centre National de la Recherche Scientifique (FR)) Thanushan Kugathasan (CERN) Tianyang Wang (University of Bonn (DE)) Toko Hirono (University of Bonn (DE)) Tomasz Hemperek (University of Bonn (DE)) Walter Snoeys (CERN) Yavuz Degerli (CEA - Centre d'Etudes de Saclay (FR)) Zongde Chen (cppm)

Presentation materials