Speaker
Description
We have developed a neutron imaging device based on the INTPIX4 SOI pixelated silicon sensors. INTPIX4 is an integration-type sensor with 17 $\mu$m x 17 $\mu$m pixel circuit array on a SOI wafer, in which correlated double sampling (CDS) circuits and storage capacitors are implemented for synchronized operation with outer trigger timings. The number of pixels is 832 x 512 and effective area is 14.1 mm x 8.7 mm. Readout time is 0.3-0.4 $\mu$s/pixel. Maximum frame rate is 70-90 Hz. Float Zone (FZ) silicon wafer of 500 $\mu$m thickness is used for the sensor's substrate, where its resistivity is a few k Ohm. Aluminum layer with 200 nm is coated on back side of the sensor in the fabrication process. We coat a enriched ${}^{10}$Boron of 200 nm thickness on top of this aluminum layer, which converts neutrons to energetic charged particles, daughter nuclei from the neutron capture reaction. The nuclei make charges in the active area of the sensor and its charge cluster indicate a position of neutron. In this presentation, we will show a production process of the conversion layer and a status of property tests of this device in neutron imaging.
| Submission declaration | Original and unpublished |
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