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Development of a Neutron Imaging Sensor using INTPIX4, SOI Pixelated Silicon Devices

Dec 14, 2019, 2:11 PM
1m
POSTER - Sun: B1F-Meeting room#3, B2F-RAN1/2; Mon-Wed: B1F Meeting rooms #5-6 (International Conference Center Hiroshima)

POSTER - Sun: B1F-Meeting room#3, B2F-RAN1/2; Mon-Wed: B1F Meeting rooms #5-6

International Conference Center Hiroshima

Peace Memorial Park, Hiroshima-shi
POSTER Pixel sensors for imaging POSTER

Speaker

Yoshio Kamiya (University of Tokyo (JP))

Description

We have developed a neutron imaging device based on the INTPIX4 SOI pixelated silicon sensors. INTPIX4 is an integration-type sensor with 17 $\mu$m x 17 $\mu$m pixel circuit array on a SOI wafer, in which correlated double sampling (CDS) circuits and storage capacitors are implemented for synchronized operation with outer trigger timings. The number of pixels is 832 x 512 and effective area is 14.1 mm x 8.7 mm. Readout time is 0.3-0.4 $\mu$s/pixel. Maximum frame rate is 70-90 Hz. Float Zone (FZ) silicon wafer of 500 $\mu$m thickness is used for the sensor's substrate, where its resistivity is a few k Ohm. Aluminum layer with 200 nm is coated on back side of the sensor in the fabrication process. We coat a enriched ${}^{10}$Boron of 200 nm thickness on top of this aluminum layer, which converts neutrons to energetic charged particles, daughter nuclei from the neutron capture reaction. The nuclei make charges in the active area of the sensor and its charge cluster indicate a position of neutron. In this presentation, we will show a production process of the conversion layer and a status of property tests of this device in neutron imaging.

Submission declaration Original and unpublished

Primary author

Yoshio Kamiya (University of Tokyo (JP))

Co-authors

Dr Yoshinobu Miyoshi (High Energy Accelerator Research Organization (KEK)) Prof. Yoshio Mita (The University of Tokyo) Prof. Ikuo Kurachi (HIgh Energy Accelerator Research Organization) Yasuo Arai (High Energy Accelerator Research Organization (JP))

Presentation materials