We have introduced for the very first time doping less charge plasma technique on Silicon based microstrip detectors. We have performed Synopsys TCAD 2D simulation study of these detectors to determine the breakdown voltage and post radiation effects for next generation microstrip detector for futuristic particle physics experiments. The simulation study of doping less charge plasma on Silicon based microstrip detectors shows the improvement in breakdown voltage by around 66% (2500V for doping less charge plasma silicon detector while 1500V of doped silicon detector) over conventional doped silicon microstrip detector with same configuration/geometry. We also observed decrease in backplane capacitance of plasma based detector by around 83% (0.3Ff/um for doping less charge plasma while 1.87Ff/um for conventional doped detector) over conventional Silicon detector which is good for detection of higher signal and lesser noise. Doping less charge plasma microstrip detector is able to withstand radiation fluence of 1e15 neq/cm2 in terms of breakdown voltage unlike the conventional silicon based microstrip detector having same configuration/geometry. This doping less charge plasma technique is also helpful in thermal budget consideration of these detectors at fabrication level. . This doping less charge plasma technique in detectors may play a crucial role in determination of future particles in high energy physics experiment. We will put up the detail results of our simulation study in full paper.
|Submission declaration||Original and unpublished|