Speaker
Albert Doblas Moreno
Description
In this contribution, we will present our last LGAD developments. We have fabricated two LGAD runs. The first one is devoted to calibrate our 6-inch technology in 50 µm SOI wafers. In this sense, pad diodes are fabricated with different boron implantation doses and energies, covering a wide range of values. Some samples from this run have been distributed to different RD50 laboratories to characterize them.
The second run corresponds to a repetition of the AIDA2020 run presented at previous RD50 meetings. The masks set have been modified in order to avoid the high leakage current observed. The new detectors show a low leakage current with a breakdown voltage in the range of the expected values.
Authors
Albert Doblas Moreno
Dr
Salvador Hidalgo Villena
(Instituto de Microelectronica de Barcelona (IMB-CNM-CSIC))
Maria Manna
(Centro National de Microelectronica - CNM-IMB-CSIC)
David Flores Gual
(Instituto de Fisica Corpuscular (ES))
Dr
Angel Merlos Domingo
(Instituto de Microelectronica de Barcelona IMB-CNM(CSIC))
Dr
Sofia Otero Ugobono
(Consejo Superior de Investigaciones Cientificas (CSIC) (ES))
Dr
Giulio Pellegrini
(Centro Nacional de Microelectrónica (IMB-CNM-CSIC) (ES))
Dr
David Quirion
(IMB-CNM, CSIC)
