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Dr Richard Bates (Department of Physics and Astronomy)02/06/2010, 09:30New StructuresThe transient response of 3D detectors has been modeled using TCAD. Experimental results (testbeam and in laser experiments ) show a negative peak observed from a neighbouring pixel to the pixel in which the mip passes . This response is shown and explained The simulation is performed for CNM double sided devices and full 3d detectors. The simulation will be extended to understand the...Go to contribution page
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Zheng Li (BNL)02/06/2010, 09:50TalkFull 3-dimensional device simulations have been carried on the new BNL 3D-Trench electrode detectors (or Independent Coaxial Detector Array (ICDA)). The full 3D simulations confirmed the conclusions from previous 1D simulations: the electric field in the 3D-Trench electrode detectors is much more homogeneous and no saddle points in electric potential as compared to the standard 3D detectors...Go to contribution page
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Ms Daniela Bassignana (IMB-CNM CSIC)02/06/2010, 10:10New StructuresWe propose a new 2D silicon detector based on a common one-side microstrip detector with each strip covered by a resistive material layer in order to provide position information in the strip length direction. The first prototypes have been fabricated in the IMB-CNM clean room facilities. Simulations and electrical characterization results will be presented.Go to contribution page
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Michael Koehler (Freiburg University)02/06/2010, 10:30New StructuresThis talk presents measurements of irradiated double-sided 3D silicon strip detectors. The devices under test were irradiated at the proton cyclotron in Karlsruhe with fluences expected for the sLHC strip and pixel layers. Results of measurements performed in a test beam with high energy pions and with an infrared laser are presented. Charge multiplication, which leads to a significantly...Go to contribution page
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Celeste Fleta02/06/2010, 11:10New StructuresTalk
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Mr Ozhan Koybasi (Purdue University)02/06/2010, 11:30New StructuresTwo different 3D detector designs with CMS pixel readout electronics are being developed and evaluated for their advantages and drawbacks.The fabrication of full-3D active edge CMS pixel detectors with p-type substrate has been successfully completed at SINTEF. Electrical characteristics and preliminary beam test results of these devices will be presented.Go to contribution page
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Richard Bates02/06/2010, 11:50
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