Conveners
Semiconductor Detectors: Active Sensors 1
- Markus Friedl (Austrian Academy of Sciences (AT))
Semiconductor Detectors: Active Sensors 2
- Joachim Josef Mnich (CERN)
Semiconductor Detectors: Active Sensors 3
- Thomas Bergauer (Austrian Academy of Sciences (AT))
Semiconductor Detectors: Passive Sensors
- Marko Dragicevic (HEPHY Vienna)
Semiconductor Detectors: Timing
- Thomas Bergauer (Austrian Academy of Sciences (AT))
Semiconductor Detectors: Timing and LGADs
- Kalliopi Kanaki (ESS - European Spallation Source (SE))
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Dominik Dannheim (CERN)24/02/2022, 09:00Semiconductor DetectorsLive Presentation
The physics aims at future lepton colliders such as CLIC or FCC-ee pose challenging demands on the performance of the vertex and tracking-detector systems. A single-plane spatial resolution of a few microns is needed, combined with a low mass of ~0.2%-1% X0 per layer. Moreover, hit-time tagging with a few ns resolution is required for beam-background rejection at CLIC. An even better timing...
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Szymon Bugiel (AGH University of Science and Technology (PL))24/02/2022, 09:25Semiconductor DetectorsLive Presentation
Decreasing the process feature size of monolithic CMOS pixel sensors is expected to enhance their overall performance, in terms of time and spatial resolutions, power dissipation and hit handling capabilities. CERN has organized the access to the Tower 65 nm CMOS sensor process, which is currently investigated by a large consortium as a potential technological candidate for the design of...
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Håkan Wennlöf (DESY)24/02/2022, 09:50Semiconductor DetectorsLive Presentation
The Tangerine project aims to develop state-of-the-art high-precision silicon detectors. This contribution is focused on Work Package 1, which has the goal of developing a monolithic active pixel sensor using a novel 65 nm CMOS imaging process, with a small collection electrode. This process is so far unused in particle physics applications, but is of great interest as it allows an increased...
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Andrei Dorokhov (Centre National de la Recherche Scientifique (FR))24/02/2022, 10:15Semiconductor DetectorsLive Presentation
The Micro-Vertex Detector of the CBM experiment at FAIR will be equipped with the full custom CMOS Pixel Sensor called MIMOSIS designed at IPHC, which is also developed for the EU project CREMLINplus and serves as a forerunner for future high precision tracking devices.
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Several prototypes and building blocks are developed and tested by IPHC-IKF-GSI collaboration in order to fulfill the... -
Patrick Sieberer (Austrian Academy of Sciences (AT))24/02/2022, 11:00Semiconductor DetectorsLive Presentation
The CERN RD50 CMOS working group is designing and characterizing DMAPS for use in high radiation environments fabricated in the LFoundry 150nm HV-CMOS process. The first iteration of this chip, RD50-MPW1, suffered from high leakage current, low breakdown voltage and crosstalk. In order to mitigate these shortcomings, an improved version with improved pixel geometry was designed. The RD50-MPW2...
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Ivan Dario Caicedo Sierra (University of Bonn (DE))24/02/2022, 11:25Semiconductor DetectorsLive Presentation
Monolithic CMOS active pixel sensors in depleted substrates (DMAPS) are an attractive development for pixel tracker systems in high-rate collider experiments. The radiation tolerance of these devices is enhanced through technology add-ons and careful design, which allow them to be biased with large voltages and collect charge through drift in highly resistive silicon bulks. In addition, the...
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Matt LeBlanc (CERN)24/02/2022, 11:50Semiconductor DetectorsLive Presentation
To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the...
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Christian Bespin (University of Bonn (DE))24/02/2022, 12:15Semiconductor DetectorsLive Presentation
The increasing availability of commercial CMOS processes with high-resistivity wafers has fueled the R&D of depleted monolithic active pixel sensors (DMAPS) for usage in high energy physics experiments. One of these developments is a series of monolithic pixel detectors with column-drain readout architecture and small collection electrode allowing for low-power designs (TJ-Monopix).
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It is... -
Roberto Cardella (Universite de Geneve (CH))24/02/2022, 14:00Semiconductor DetectorsLive Presentation
Monolithic silicon pixel detectors are attractive candidates for future large-area trackers in particle physics due to their advantages, for instance to reduce the production effort and material budget. State of the art monolithic silicon pixel detectors can reach high spatial precision. Integrating picosecond time resolution in such devices would significantly improve their performance and...
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Manuel Dionisio Da Rocha Rolo (Universita e INFN Torino (IT))24/02/2022, 14:25Medical ApplicationsLive Presentation
The ARCADIA Collaboration is developing a technology platform for the design, fabrication and characterisation of innovative monolithic sensors compatible with standard CMOS processes. The sensor technology allows to fully deplete the substrate for a fast charge collection only by drift, while the use of a small collection electrode maximises the signal-to-noise ratio. Backside lithography is...
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Peter Fischer24/02/2022, 14:50SiPMLive Presentation
The detection of light from optical fibers is required in a variety of detector concepts like fiber trackers or sampling calorimeters. Instead of using photo detectors like PMTs or SiPMs and associated readout electronics, we propose to combine Single Photon Sensitive Avalanche Diodes (SPADs) and CMOS readout electronics on the same silicon die. We have developed, fabricated and initially...
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Leena Diehl (Albert Ludwigs Universitaet Freiburg (DE))24/02/2022, 15:15Semiconductor DetectorsLive Presentation
Silicon sensors will continue to be the central tracking elements for upcoming particle physics detectors. They will have to cover large areas and thus be a main cost driver. The currently used silicon sensors are available only from very few manufacturers, thus detector technologies and designs that can be realized through established commercial industrial production processes and are...
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Valentina Sola (Universita e INFN Torino (IT))24/02/2022, 16:00Semiconductor DetectorsLive Presentation
In this contribution, we present a new development of radiation-resistant silicon sensors. This innovative sensor design exploits the recently observed saturation of radiation damage effects on silicon, together with the usage of thin substrates, intrinsically less affected by radiation. The internal multiplication of the charge carriers will be used to overcome the small signals coming from...
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Konstantinos Damanakis (Austrian Academy of Sciences (AT))24/02/2022, 16:25Semiconductor DetectorsLive Presentation
The new demanding environment of High Luminosity LHC, which is expected to reach an integrated luminosity up to 3000-4000 fb$^{-1}$ by the end of its lifetime, sets new challenges for the CMS Tracking System. The full sub-detector needs to be replaced to cope with the increased radiation levels while maintaining the excellent tracking performance of the existing detector. The Phase-2 Upgrade...
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Davide Zuolo (Universita & INFN, Milano-Bicocca (IT))24/02/2022, 16:50Semiconductor DetectorsLive Presentation
The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for an upgrade of the CMS tracking detector to cope with the increased radiation levels while maintaining the excellent performance of the existing detector.
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Specifically, new high-radiation tolerant solid-state pixel sensors, capable of surviving irradiation fluencies up to a $ 2.0 \times 10^{16} \: n_{eq}/cm^2$ at... -
Philipp Gaggl (Austrian Academy of Sciences (AT))24/02/2022, 17:15Semiconductor DetectorsLive Presentation
The material properties of Silicon-Carbide (SiC) make it a promising candidate for application as particle detector at high beam rates. In comparison to Silicon (Si), the increase in charge carrier saturation velocity and breakdown voltage allow for high time resolution while mitigating pile ups. The larger bandgap improves radiation hardness and suppresses dark current. The presented project...
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Nicolo Cartiglia (INFN Torino (IT))25/02/2022, 09:00Semiconductor DetectorsInvited Talk
In the past 10 years, there has been growing interest in developing particle trackers that combine excellent spatial and temporal accuracy. This evolution has been made possible by introducing in the design of silicon sensors several innovations that have substantially increased their capabilities of measuring time accurately. In this presentation, I will review this recent evolution and...
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Werner Riegler (CERN)25/02/2022, 09:45Semiconductor DetectorsLive Presentation
Precision timing with solid state detectors is being employed in many areas of particle physics instrumentation. Applications for pileup rejection and time of flight measurements at the LHC are just two of many notable examples.
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During the past years we studied the contributions to the time resolution for various types of silicon sensors. The principal contributors to the time resolution are... -
Dr Milko Jaksic (Ruđer Bošković Institute)25/02/2022, 10:10Semiconductor DetectorsLive Presentation
Developments of semiconductor detectors with increased tolerance to the high radiation levels are resulting often in devices that deviate significantly from the classical planar electrode designs. Shorter collection distances that are utilised in 3D detectors (silicon and diamond) in which electrodes are penetrating into the crystal bulk, and the introduction of charge multiplication regions...
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Michele Veltri (Universita e INFN, Firenze (IT))25/02/2022, 10:35Semiconductor DetectorsLive Presentation
The unprecedented density of charged particles foreseen at the next generation of experiments at future hadronic machines poses a significant challenge to the tracking detectors, that are expected to stand extreme levels of radiation as well as to be able to efficiently reconstruct a huge number of tracks and primary vertices. To meet this challenge new extremely radiation hard materials and...
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Matteo Centis Vignali (FBK)25/02/2022, 11:30Semiconductor DetectorsLive Presentation
The High Luminosity upgrade of the Large Hadron Collider highlighted the need for a time-tagging of tracks with a precision of tens of picoseconds. This requirement motivated the development of radiation hard silicon sensors dedicated to the time-of-interaction measurement of minimum ionizing particles. Low Gain Avalanche Detectors (LGADs) are silicon sensors with internal charge...
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Matias Senger (Universitaet Zuerich (CH))25/02/2022, 11:55Semiconductor DetectorsLive Presentation
A spacial and temporal characterization of the novel Trench Isolated LGAD (TI-LGAD) production at FBK from the RD50 collaboration is presented. This technology is promising for the implementation of the so called 4D-pixels aiming to combine in one device position tracking functionality together with a precise timing determination. In the TI-LGAD technology, each pixel is an individual LGAD and...
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Federico Siviero (Universita e INFN Torino (IT))25/02/2022, 12:20Semiconductor DetectorsLive Presentation
Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors based on the LGAD technology, characterized by a continuous gain layer and by an internal signal-sharing mechanism.
RSDs are very promising tracking detectors that combine large pitch and extremely accurate position reconstruction: the most recent results show a spatial resolution of 2 μm for a sensor with...
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