Conveners
Sensors: 1
- Gian-Franco Dalla Betta (INFN and University of Trento)
Sensors: 2
- Angela Kok
In the past few years, two design innovations have radically changed the performance of silicon detectors and turned silicon sensors into high-resolution timing detectors, fit to meet the very demanding requirement of future 4D trackers. In this presentation, I will review the performance improvements that these two design innovations, low-gain (LGAD) and resistive read-out (RSD) [1], have...
Soft x-ray photon science at free-electron laser (FEL) and synchrotron radiation (SR) facilities plays a vital role in many research fields. With light sources advancing and upgrades such as SLS 2.0 (PSI, Switzerland) and LCLS-II (Stanford University, USA) on the horizon, detector systems that meet the requirements of high-performance x-ray science at next generation sources are becoming a...
In the passive CMOS Strips Project, strip sensors were designed and produced at LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors were tested in a probe...
The HASPIDE project aims to investigate the use of a-Si:H as a material for detecting different types of ionizing radiation in applications like radiation flux measurement, dosimetry, and measurement of ionizing radiation in the spatial environment. The demand for radiation-resistant detectors capable of high dynamic range and precise measurement of fluxes is increasing and a-Si:H thanks to...
The Cu(In,Ga)Se2 (CIGS) semiconductor, initially developed for solar cells, is expected to have high radiation tolerance with a recovery of radiation damage with the compensation of the defects by ions and would shed new light on the use for particle detector and camera under the high radiation environment.
In this talk, results of Xe ion irradiation will be presented.
The Horizon 2020 MONOLITH ERC Advanced project aims at producing a monolithic silicon pixel ASIC with 50μm pixel pitch and picosecond-level time stamping. The two main ingredients of the project are fast and low-noise SiGe BiCMOS electronics and a novel sensor concept, the Picosecond Avalanche Detector (PicoAD). The PicoAD uses a patented [1] multi-PN junction to engineer the electric field...
The semiconductor pixel detectors of the Timepix family provide position-, time- and directional-sensitive spectrometry for high-resolution wide-range spectral tracking of single particles [1]. These properties are valuable also for inspection and as testing probe of properties and homogeneity of radiation response and charge collection of the semiconductor sensor. The hybrid architecture of...
Gallium arsenide is extensively studied for about seven decades as an excellent material for semiconductor lasers, LEDs, and microwave electronics. GaAs has noticeable advantages over silicon and Cd(Zn)Te for radiation detectors. Particularly GaAs has higher electron mobility compared to Si and Cd(Zn)Te; higher average atomic number compared to Si; and lower probability and energy of the...
The hybrid pixel detectors are powerful technologies for the radiation imaging. Sensors and ASICs can be improved for performance in the individual processes. In particular, photon counting ASICs are revolutionizing various applications. We developed a cadmium telluride (CdTe) pixel detector (WERPAD: Wide Energy Range Pixel Array Detector). Dual energy and energy dispersive X-ray diffractions...
Due to their lack of charge, low-energy neutrons are not detectable in typical semiconductors often applied to radiation detection, and instead detectors use expensive or dangerous gases (e.g., 3He, BF3) in bulky, immobile devices. Using a neutron-sensitive material however, silicon can be used to indirectly observe neutrons via detection of decay products. The INDet (Improved efficiency for...