22–26 Jul 2024
CICG - GENEVA, Switzerland
Europe/Zurich timezone

Fabrication of Intrinsic Josephson Junction Devices using Hydrogen-Atmosphere Treatment

23 Jul 2024, 14:00
2h
Poster area

Poster area

Poster Presentation (120m) ICEC 14: New devices and novel concepts Tue-Po-1.3

Speaker

Hiromi Tanaka (National Institute of Technology, Yonago College)

Description

Using a hydrogen annealing process, we have successfully fabricated intrinsic Josephson junction (IJJ) tunneling devices in Bi2Sr2CaCu2Oy (Bi-2212) high-temperature superconductor. To flow electrical current along c-axis direction, a Bi-2212 single crystal was annealed in a hydrogen atmosphere at 300-500℃ for 15-60 minutes. By the annealing, an electrical property of the Bi-2212 single crystal between electrodes was deteriorated. Therefore, a current pathway was changed from ab-plane direction to c-axis direction. The annealed Bi-2212 single crystal showed clear voltage jumps in current-voltage characteristics.
To investigate how the intrinsic Josephson junction tunneling device is formed by the new process, we carried out X-ray photoemission spectroscopy. From Cu 2p XPS spectra obtained at Bi-2212 single crystals annealed in hydrogen-nitrogen mixed gas, we found that Cu ions in a new region were reduced. The new region does not show a superconducting property in R-T characteristics because of the high resistivity. Therefore, it is expected that the new region changes a current pathway. The change of a current pathway probably leads to an attainment of IJJ tunneling devices. Our process is expected to have great advantages in its technical simplicity.

Submitters Country 日本

Author

Hiromi Tanaka (National Institute of Technology, Yonago College)

Co-authors

Eiji Hitsuda (National Institute of Technology, Yonago College) Kojirou Yamamoto (National Institute of Technology, Yonago College)

Presentation materials