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Prof. Mara Bruzzi (INFN and University of Florence), Michael Moll (CERN)12/11/2007, 09:00
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Hartmut Sadrozinski (Santa Cruz Inst. for Particle Phys. (SCIPP) - Univ. of Californi)12/11/2007, 09:15Towards the SLHC (invited overview talks)
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Marcello Mannelli (CERN)12/11/2007, 09:45
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Lars Eklund (Department of Physics and Astronomy)12/11/2007, 10:45Towards the SLHC (invited overview talks)The plans for the upgrade of the LHCb experiment will be presented. The LHCb experiment plans to upgrade from its nominal instantaneous luminosity of 2x10^32 cm^-2s^-1 to around a factor of ten higher. The key elements of the upgrade will be a displaced vertex trigger at the initial level of triggering and a radiation hard vertex detector. An overview of the changes required to the full...Go to contribution page
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Hartmut Sadrozinski (Santa Cruz Inst. for Particle Phys. (SCIPP) - Univ. of Californi)12/11/2007, 11:10Full Detector SystemsWe will show data on C-V, I-V, Cint, Rint etc. pre-rad and post rad. But we will concentrate on charge collection with a beta source and compare neutron irradiated sensors up to 2e15 n/cm^2.Go to contribution page
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Dr Gianluigi Casse (Department of Physics)12/11/2007, 11:30Full Detector SystemsComparison of the charge collection efficiency of 300µm and 140µm thick silicon microstrip detectors after neutron irradiation up to 1x10^16 cm-2.Go to contribution page
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Dr Anthony Affolder (University of Liverpool)12/11/2007, 11:50Full Detector SystemsComparison of the charge collection efficiency as a function of resistivity and annealing times for FZ and MCz p-type silicon microstrip detectors after neutron irradiation up to 3x10^15 cm-2.Go to contribution page
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Panja-Riina Luukka (Helsinki Institute of Physics HIP)12/11/2007, 13:30Full Detector SystemsThe silicon strip detector based beam telescope, the SiBT, was upgraded in spring 2007 using DAQ components from the CMS Tracker module testing and Fermilab D0 RunIIb silicon strip sensors from Hamamatsu. The interpolated position resolution of the telescope is 9 µm, it has a S/N of 25 and an active area of 4 x 4 cm2. The telescope contains 8 reference detector planes in ±45 degree orientation...Go to contribution page
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Martin Frey (Institut fuer Experimentelle Kernphysik)12/11/2007, 13:50Full Detector SystemsIn a beamtest at CERN H2 the behaviour of irradiated and non-irradiated full-size AC-coupled strip detectors made of n-type magnetic Czochralski silicon was investigated. The sensors of the size of 4x4 cm^2, 300µm thickness with 768 strips and 50µm pitch had been produced at the Helsinki Institute of Physics. After the qualification, the sensors were irradiated with fluences between 10^14/cm^2...Go to contribution page
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Dr Alberto Messineo (Univ. + INFN)12/11/2007, 14:10Full Detector SystemsPreliminary measurement of CCE on Fz, MCz and Epitaxial micro-strip sensors equipped with CMS F.E. read-out fast electronics.Go to contribution page
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Dr Lars Eklund (University of Glasgow)12/11/2007, 14:30Full Detector SystemsWe present details of a readout system for strip detectors, using LHCb Beetle chips and TELL1 DAQ. The front-end chip takes analogue samples from each strip at 40MHz. External triggering and time measurement are required to select hits on the sensors. The system has very recently been used at the ATLAS 3D testbeam, with 3D-STC strips (produced by Trento, tested by Freiburg) and with n-on-p...Go to contribution page
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12/11/2007, 14:50
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Dr Jaakko Haerkoenen (Helsinki Institute of Physics HIP)12/11/2007, 15:50Defect Engineering and Pad Detector CharacterizationN-type MCz-Si pad detectors have been irradiated by 9 MeV and 24 GeV/c protons up to 1x10^16 neff/cm^2 fluence. The samples have been characterized by Transient Current Technique (TCT) operating with 670nm laser and Charge Collection Efficiency (CCE) measurements performed by 1060nm IR laser. Low and high energy proton irradiation results are compared and charge collection of MCz-Si detectors...Go to contribution page
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Eckhart Fretwurst12/11/2007, 16:10E. Fretwurst (a), L. Andricek (b), G. Lindström (a), H.G. Moser (b), I. Pintilie (a,c), R. Richter (b), R. Röder (d) (a) University of Hamburg, (b) MPI-Semiconductor Laboratory Munich, (c) NIMP Bucharest, (d) CiS Institute for Microsensoric Erfurt Preliminary results on 24 GeV/c proton irradiated thin n-type FZ (50 µm, 100 µm), MCz (100 µm), epitaxial (72, 100, 150 µm, standard and...Go to contribution page
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Katharina Kaska (CERN, Technische Universitaet Wien)12/11/2007, 16:30Defect Engineering and Pad Detector CharacterizationA series of epitaxial detectors of 150 mum thickness produced by different producers (IRST, CNM, HIP) will be compared to each other (CV,IV,CCE) after proton and neutron irradiation.Go to contribution page
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Jens Weber (Universität Dortmund)12/11/2007, 16:50Defect Engineering and Pad Detector CharacterizationDue to the thickness and therefore very short signal length, the classic analysis techniques (ECC, CCM) failed for the determination of trapping times. We presented a method which allows to extracted the trapping time constant without a time resolved signal. The method is a combination of simulation and measuremnt of the charge collection of an irradiated pad detector.Go to contribution page
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Dr Elena Verbitskaya (Ioffe Physico-Technical Institute RAS)12/11/2007, 17:10
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12/11/2007, 17:30
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Michael Moll (CERN)12/11/2007, 18:00Several types of silicon wafers (FZ, MCZ, EPI0 have been ordered via RD50 - A brief overview of the status is given.Go to contribution page
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Oliver Bruning (CERN)13/11/2007, 09:00
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Li Long (CIS, Erfurt, Germany)13/11/2007, 09:30Li Long and Ralf Röder CiS Institut of Micro Senors GmbH 99099 Erfurt, Germany Abstract After three decades persistent investigation and development, semiconductor irradiation detector has continuously improved its performance and extended its application. A huge amount of researches regarding radiation hardness, detection efficiency, position and time resolution, and noise has been...Go to contribution page
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Hans-Günther Moser (Max-Planck-Institut)13/11/2007, 09:503D Detectors and New StructuresStatus of the R&D on thin planar detectors: - Design and layout of test structures. - Procurement and processing of the SOI-FZ test wafers - Procurement and processing of the EPI wafers - Simulations - Irradiation plansGo to contribution page
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Gregor Pahn (Fakultaet fuer Physik - Albert-Ludwigs-Universitaet Freiburg)13/11/2007, 10:403D Detectors and New StructuresA summary will be given on recent Freiburg activities with emphasis on tests of 3D STC detectors. We have tested a module with two Trento-made 3Ds, irradiated up 10^15 Neq.Go to contribution page
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Mr David Pennicard (University of Glasgow)13/11/2007, 11:003D Detectors and New StructuresWe present simulations of radiation-damaged 3D detectors, showing how electrode spacing and different device structures affect depletion and charge collection behaviour at 10^16 neq/cm2 damage. The simulation results are compared with existing measurements on planar and 3D sensors.Go to contribution page
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13/11/2007, 11:20
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Eckhart Fretwurst (II. Institut fuer Experimentalphysik)13/11/2007, 13:30Defect and Material CharacterizationE. Fretwurst for the Wodean collaboration Universities of Hamburg, Florence, Minsk, Oslo, Vilnius; NIMP Bucharest, CERN-PH, JSI Ljubljana, Kings College London, ITME Warsaw A short introduction on the WODEAN project will be given, The main object the project is to combine several methods of defect analysis in a correlated effort for the investigation of radiation induced defects,...Go to contribution page
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Ioana Pintilie (NIMP Bucharest)13/11/2007, 13:50Defect and Material CharacterizationCluster related defects were investigated by the Thermally Stimulated Current (TSC) method in neutron irradiated n-type Si diodes during 80C annealing. Three hole traps proved to have an electric-field-enhanced emission characteristic for Coulombic wells. Their zero field emission rates were obtained describing the TSC peaks with the three-dimensional Poole Frenkel formalism when accounting...Go to contribution page
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Ms Alexandra Junkes (Institute for Experimental Physics, University of Hamburg)13/11/2007, 14:10Defect and Material CharacterizationIsothermal annealing studies at 60° C and 300° C were performed on thin FZ, MCz and EPI-DO n-type silicon diodes after irradiation with reactor neutrons. Deep level transient spectroscopy (DLTS) was used to follow the evolution of defect levels while C/V and I/V characteristics were taken to determine the electrical properties (depletion voltage and leakage current) of the detectors. A...Go to contribution page
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Dr Leonid Makarenko (Belarusian State University)13/11/2007, 14:30Defect and Material CharacterizationIt is expected the formation of defect clusters when high-energy Si knock-on atoms are created and cluster effects are likely to be quite important for radiation damage of silicon detectors in LHC experiments. However the understanding of these effects in Si detectors irradiated with different particles is insufficient as compared to the knowledge on the role of isolated point defects. DLTS...Go to contribution page
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Prof. Pawel Kaminski (Institute of Electronic Materials Technology)13/11/2007, 15:30Defect and Material CharacterizationHigh-resolution photoinduced transient spectroscopy (HRPITS) and photoluminescence (PL) measurements have been employed to studying the annealing-induced changes in the defect structure of MCz Si irradiated with the very high fluence of 1-MeV neutrons. The defect centres were studied after three annealing steps: 1h, 80 oC; 1h, 80 oC + 1h, 160 oC and 1h, 80 oC + 1h, 160 oC + 1h, 240 0C. It is...Go to contribution page
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Dr Eugenijus Gaubas (Vilnius university)13/11/2007, 15:50Defect and Material CharacterizationFluence dependent recombination lifetime in neutron and proton irradiated MCz , FZ and epi-Si structures. E.Gaubas, J.Vaitkus, T.Ceponis, A.Uleckas, J.Raisanen, S.Vayrynen, and E.Fretwurst Results of comparative investigation of recombination lifetime in neutron and proton irradiated MCz, FZ and epi-Si structures are presented. Recombination lifetime in neutron and high energy proton...Go to contribution page
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Juozas Vaitkus (Inst. of Mater. Sci. & Appl. Res. (IMSAR) - Vilnius University)13/11/2007, 16:10Defect and Material CharacterizationIt is presented the dependence of the photoconductivity spectra in the irradiated by neutrons with fluence 1e14 - 1e16 cm-2. The deep local levels are identified by Lucovsky model, data about traps obtained from thermally stimulated conductivity and the effects of conductivity via impurity (traps) band - from the temperature dependence of persistant conductivity. The results are discussed...Go to contribution page
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Prof. Bruno Sopko (Czech Technical University (CTU))13/11/2007, 16:30Defect and Material CharacterizationN-type SI InP material [100] doped with Fe (deep acceptor) was initial substrate for preparation of detectors structures. P-N junction structures were produced by liquid phase epitaxy technique with Zn and Mg. Electrical and detection parameters of structures were measured and compared.Go to contribution page
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13/11/2007, 16:50
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