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23rd RD50 Workshop (CERN)

13–15 Nov 2013
CERN
Europe/Zurich timezone

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Contribution List

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  1. 0. Workshop Opening
    Michael Moll (CERN)
    13/11/2013, 10:00
  2. 15. PECULIARITIES OF DARK CONDUCTIVITY IN IRRADIATED SILICON (not Friday)
    Prof. Juozas Vaitkus (Vilnius University)
    13/11/2013, 10:10
    The electrical properties of the irradiated by neutrons Si are analyzed by means of the Hall effect and magnetoresistance temperature dependence in a few series of Si samples. It is demonstrated that the electron mobility decrease with temperature as a power law with index less than in the nonirradiated silicon and can become near to one in the highly irradiated silicon. The analyze of...
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  3. 23. Initial acceptor removal in p-type silicon detectors
    Gregor Kramberger (Jozef Stefan Institute (SI))
    13/11/2013, 10:30
    Initial acceptor removal in p-type silicon detectors was studied for different samples after reactor neutron and 24 GeV proton irradiations. Although at HL-LHC fluences the initial acceptor removal is not important for standard detectors, it may play an important role in changing the properties of the multiplication layer of LGAD devices and consequent reduction of gain. A set of simple pad...
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  4. 14. Preliminary results on measurements of surface recombination velocity on SLIM edges passivated Si (not Friday)
    Prof. Juozas Vaitkus (Vilnius University)
    13/11/2013, 10:50
    The light pulse excited microwave conductivity decay method for surface recombination rate measurement is presented. The preliminary results are performed in the differently passivated silicon samples surface.
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  5. 45. Particulas Demonstration of a Commercial TCT system
    Gregor Kramberger (Jozef Stefan Institute (SI))
    13/11/2013, 11:30
  6. 8. Systematic investigation of p-irradiated Micron pad detectors of different silicon materials
    Hannes Neugebauer (Hamburg University (DE))
    13/11/2013, 11:41
    A clear understanding of the underlying physics is essential for the evaluation of detectors in high energy physics. For this purpose Micron detectors of different silicon types (FZ, MCz, n-bulk, p-bulk) provided by the RD50 collaboration have been irradiated with 24GeV protons at CERN PS up to fluences of 3e16 neq/cm2. In addition to the characteristics of leakage current (IV), capacitance...
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  7. 38. Discussion on Defect and Sensor Characterization
    Eckhart Fretwurst (II. Institut fuer Experimentalphysik)
    13/11/2013, 12:01
  8. 18. Charge Collection Measurements on Dedicated RD50 Charge Multiplication SSDs
    Christopher Betancourt (Freiburg University)
    13/11/2013, 13:30
    The Collection charge of specially designed charge multiplication silicon strip detectors produced by MICRON Semiconductor Co. Ltd. within the CERN RD50 framework is investigated. Charge collection measurements are performed before and after irradiation with a proton fluence of 1e15 and a neutron fluence ranging from 1-5e15 1 MeV neq /cm2 (neq /cm2). Structures and modifications on these...
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  9. 33. Status of Silicon Strip Sensor Measurements at Liverpool
    Sven Wonsak (University of Liverpool (GB))
    13/11/2013, 13:50
    First charge collection results with room temperature annealed dedicated RD50 charge multiplication sensors will be presented, at 1e15 neq/cm2 and 5e15 neq/cm2. The multiplication sensors feature many different structures specially designed to take advantage of multiplication after heavy irradiation. These devices were produced by Micron Semiconductor Ltd (UK). To investigate the current...
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  10. 17. A parametrization of the performance of Ultra-Fast Silicon detector
    Mr Nicolo Cartiglia (INFN)
    13/11/2013, 14:10
    Using data from existing silicon pixel systems, a model to estimate the performance of UFSD is presented.
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  11. 34. Thermal characterization of Low Gain Avalanche Detectors (before 4pm)
    Marcos Fernandez Garcia (Universidad de Cantabria (ES))
    13/11/2013, 15:00
    We have studied the thermal characteristics of few tens of Low Gain Avalanche Diodes (LGAD) produced by CNM-Barcelona. Changes of gain and noise as a function of temperature are reported. 2D-mappings of gain over the surface of the detectors have also been measured.
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  12. 9. Studies of LGAD diodes in Ljubljana (an update)
    Gregor Kramberger (Jozef Stefan Institute (SI))
    13/11/2013, 15:20
    A large set of diodes was characterized before irradiations and after neutron irradiations with different techniques CV/IV/TCT/CCE. It was found that large spread of device leakage current before irradiation has no impact on gain (constant within 15% for all samples) of the devices, but it does on noise. The excess current seem no to be related to the bulk current and there are indications...
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  13. 31. First results of new p-type strip and pad detectors with LGAD in epitaxial wafers (remote, afternoon)
    Mrs Marta Baselga (CNM (Barcelona))
    13/11/2013, 15:40
    In the framework of the RD50 collaboration new p-type devices with LGAD in epitaxial wafers and float zone wafers were fabricated in CNM. Here we present first results of strips and pad detectors.
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  14. 3. Electrical and alpha TCT measurements on LGAD produced by CNM (not on Wed. morning)
    Hartmut Sadrozinski (SCIPP, UC santa Cruz)
    13/11/2013, 16:00
    WE have performed I-V, C-V and alpha TCT measurements
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  15. 12. Discussion on LGAD and other detectors with Avalanche
    Dr Giulio Pellegrini (CNM-IMB-CSIC (ES))
    13/11/2013, 16:20
    Discussion on measurements and the technology developed for the fabrication of Low Gain Avalanche Detectors (LGAD) for tracking applications.
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  16. 36. Planar Pixel Detectors for the ATLAS Pixel Detector upgrade
    Gianluigi Casse (University of Liverpool (GB))
    14/11/2013, 09:00
  17. 4. Radiation hard silicon sensors for the CMS tracker upgrade (Not Wednesday early morning)
    Dr Georg Steinbrueck (Hamburg University (DE))
    14/11/2013, 09:30
    At an instantaneous luminosity of 5 × 1034 cm−2 s−1, the high-luminosity phase of the Large Hadron Collider (HL-LHC) is expected to deliver a total of 3000 fb−1 of collisions, hereby increasing the discovery potential of the LHC experiments significantly. However, the radiation dose of the tracking systems will be severe, requiring new radiation hard sensors for the CMS tracker. The CMS...
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  18. 2. Investigation of non gaussian noise in irradiated p-on-n sensors
    Andreas Matthias Nurnberg (KIT - Karlsruhe Institute of Technology (DE))
    14/11/2013, 10:05
    In the CMS campaign to find the new baseline material for the next tracker, irradiated p-on-n sensors showed a non-gaussian noise behaviour. The effect has been quantified and studied systematically as a function of the applied bias voltage and sensor annealing, as well as irradiation fluence, particle type and energy and sensor geometry. In some operation area, this effect would lead to an...
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  19. 32. ATLAS12A Endcap Mini Sensors Electrical Testing
    Marcela Mikestikova (Acad. of Sciences of the Czech Rep. (CZ))
    14/11/2013, 10:55
    Electrical tests of ATLAS12A EndCap mini sensors manufactured by HPK were performed in Freiburg, Prague and Valencia. Results of leakage current and full depletion voltage as well as coupling capacitance, bias resistance, inter-strip capacitance and resistance and punch-trough measurements on non-irradiated sensors will be presented.
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  20. 20. Silicon Sensors Irradiation Study for ILC Extreme Forward Calorimetry
    Vitaliy Fadeyev (University of California,Santa Cruz (US))
    14/11/2013, 11:15
    We are working on the proposed small angle calorimeter for ILC, "BeamCal". The detector, which is envisioned as a tungsten sandwich calorimeter, will be subject to high fluences EM radiation that will shower in the tungsten radiator. We are doing studies that explore the effects of radiation damage on candidate sensors at shower-max within the induced shower. In addition to electrons,...
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  21. 26. Status of the Low Resistance Strip Sensors Project
    Dr Miguel Ullan Comes (Universidad de Valencia (ES))
    14/11/2013, 11:35
    An update will be presented on the status of the LowR project. General performance results from the first Low-R sensors fabricated at the clean room of CNM-Barcelona will be shown (technological parameters, IV, CV). Results on the tests on other important sensor parameters like strip resistance, inter-strip isolation, and pulse shape will also be presented. First tests on the PTP structures...
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  22. 39. Discussion Session - Full Detector Systems
    Gregor Kramberger (Jozef Stefan Institute (SI))
    14/11/2013, 11:55
  23. 6. TCAD for Radiation, a review
    Dr Fco. Rogelio Palomo Pinto (School of Engineering University of Sevilla)
    14/11/2013, 13:35
    We present a compendium of our latest works about simulation of radiation effects in electronics using Sentaurus TCAD. Adapting the tool, we simulate pulsed laser ionization effects, ion tracks, total ionization dose and displacement damage.
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  24. 7. A Single Event Effects tool for VLSI designers
    Dr Fco. Rogelio Palomo Pinto (School of Engineering University of Sevilla)
    14/11/2013, 13:55
    We present our SEE circuital simulation tool. It leverages from the Cadence design suite, makes automatic placement of SEE sources and uses heuristics to determine circuit sensitivities.
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  25. 40. Experimental study of the Si-SO2 interface region in p+n-silicon strip sensors before and after X-ray irradiation
    Thomas Poehlsen (University of Hamburg)
    14/11/2013, 14:15
    Standard (20 min including discussion)
    Device Simulations and some key experimental data
    The Si-SO2 interface region in a DC-coupled p+n-silicon strip sensors has been studied by TCT measurements for eh-pairs produced by focused, sub-nanosecond laser light with wavelengths of 660 nm and 830 nm. Charge losses of either electrons or holes have been observed. The charge losses depend on the biasing history; after changing the sensor voltage, they change, with time constants between...
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  26. 28. Simulations of Hadron Irradiated n+p- Si Strip Sensors Incorporating Bulk and Surface Damage
    Ranjeet Ranjeet (University of Delhi (IN))
    14/11/2013, 14:35
    The future upgrade of LHC to the SLHC, with the goal for over an order of magnitude higher luminosity (> 1035 cm -2 s -1) and over 4 times more integrated luminosity (3000fb-1) have posed challenges to develop the extreme radiation hard Si sensors. To address the problem, extensive measurements and simulations studies aimed for ATLAS and CMS tracker requirements have been initiated which are...
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  27. 30. Non-uniform 3-level defect model and status of edge-TCT simulations
    Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))
    14/11/2013, 14:55
    Proton model (effective 2-defect model based on the EVL model) used in Synopsys Sentaurus package, has proven to produce matching simulation results with measurements. However, at high fluence (> 1e15 cm-2) and thus high oxide charge, the model does not produce radiation enhanced isolation to the strips, observed in a real p-type detector. Also simulated Cint and CCE loss in the center of the...
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  28. 22. Contribution from Eg(T) dependence into parameterization of the bulk generation current of irradiated Si detectors
    Dr Vladimir Eremin (Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
    14/11/2013, 15:45
    The influence of the bandgap temperature dependence Eg(T) on the parameters of irradiated Si detectors extracted from I(T) measurements was analyzed via transformation of “statistical” form of the rate equation for the current generation to the “activation” form. The energy of the current generation, Et = 0.65 eV, was defined for the single effective level I(T) parameterization. The two level...
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  29. 11. Update on the temperature dependence of the bulk current in Si (remote)
    Alexandre Chilingarov (Lancaster University (GB))
    14/11/2013, 16:05
    New data on the temperature dependence of the current generated in Si bulk are presented. Modification of the test set-up allowed measurements with the sensor irradiated by 1E+16 neq per square cm.
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  30. 21. Trapping related negative feedback as the reason for collected charge restriction in heavily irradiated Si detectors operating with avalanche multiplication
    Dr Elena Verbitskaya (Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia)
    14/11/2013, 16:25
    Enhancement of the collected charge Qc in Si detectors irradiated beyond 10^15 neq/cm2 is analyzed basing on the PTI model and compared with the internal gain in avalanche photodiodes. The results show that in heavily irradiated Si detectors Qc enhancement due to avalanche multiplication is strongly restricted and simultaneously stabilized by the negative feedback arisen from carrier trapping,...
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  31. 29. Comparison of Radiation Hardness Properties of p+n- & n+p- Si Strip Sensors Using Simulation Approach
    Ranjeet Ranjeet (University of Delhi (IN))
    14/11/2013, 16:45
    To address the problems caused by intense radiation environment in planned SLHC tracker, extensive measurements and simulations studies aimed for CMS tracker requirements have been initiated which are investigating different designs, materials and polarity for Si microstrip sensors. One of the most important task is to compare the sustainability of p+n- and n+p- type of Si strip sensors after...
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  32. 16. TCAD simulations and beam tests: measuring the electric field in irradiates sensors
    Marco Bomben (Centre National de la Recherche Scientifique (FR))
    14/11/2013, 17:05
    Beam test data and simulations can make accessible the electric field profile of silicon sensors. Different bulk materials, irradiation and annealing scenarios can be contrasted thanks to the charge profile technique (e.g.: T. Lari and C. Troncon, IEEE TNS, VOL. 53, NO. 5, OCTOBER 2006; V. Chiochia, IEEE TNS, VOL. 52, NO. 4, AUGUST 2005) High pointing resolution telescopes and detailed TCAD...
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  33. 41. T-CAD simulation of Lorentz angle
    Andreas Matthias Nurnberg (KIT - Karlsruhe Institute of Technology (DE))
    14/11/2013, 17:25
    Standard (20 min including discussion)
    Device Simulations and some key experimental data
    T-CAD simulations are a powerful tool for understanding the properties of silicon sensors. Silvaco T-CAD allows the implementation of magnetic fields of several Tesla in the simulation. Using this simulation package, Lorentz angle measurements on strip sensors have been reproduced. Results on non-irradiated devices and the ongoing work of implementing radiation damage using an effective trap...
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  34. 35. Discussion on Simulations
    Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)
    14/11/2013, 17:45
  35. 27. Update on irradiation experiments with electrons of different kinetic energies (between 1.5 MeV and 27 MeV) performed on n-type silicon [Not on Wednesday]
    Dr Ioana Pintilie (NIMP Bucharest-Magurele, Romania)
    15/11/2013, 09:00
    Studies regarding the radiation damage induced by electrons of different kinetic energies, from 1.5 MeV to 27 MeV, are presented. The aim is to identify the chemical structure of those defects that have a direct impact on the device performance at the operating temperature. The results obtained via electrical characterization (DLTS&TSC) can be connected with structural and chemical...
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  36. 25. Charge collection and laser measurements on double-sided 3D strip sensors irradiated up to 2*10^16 n_eq/cm^2
    Riccardo Mori (Albert-Ludwigs-Universitaet Freiburg (DE))
    15/11/2013, 09:20
    Although 3D silicon sensors are characterized by higher capacitance (thus higher noise), lower spatial uniformity and more fabrication process complexity than standard sensors, the higher radiation hardness motivates the investigation of this layout in view of the LHC upgrade. In between the different 3D layouts, the double-sided represent the most attractive but also the most mechanically...
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  37. 1. Characterization of CNM's 3D pixel sensors for the phase-2 upgrade of the CMS vertex detector
    Ms Francisca J. Muñoz Sánchez (IFCA)
    15/11/2013, 09:40
    The Large Hadron Collider (LHC) is developing a very successfully work in the last two years, and it will suffer an important accelerator upgrade by 2020, the High Luminosity-LHC (HL-LHC). These improvements will increase by a factor ten the instantaneous luminosity as well as the particle luxes at the detectors, such as the Compact Muon Solenoid (CMS) experiment.The inner tracker detector...
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  38. 10. Beam test results of 3D pixel devices for forward tracking
    Joern Lange (IFAE Barcelona)
    15/11/2013, 10:00
    Tracking detectors for forward phycics experiments impose two critical requirements: first, the active area of the detector has to be as close as possible to the beam, which means that the dead region of the sensor has to be minimized. Second, the device has to be able to cope with an inhomogeneous radiation distribution. In this presentation results of beam tests of slim-edged 3D pixel...
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  39. 19. Status of Scribe-Cleave-Passivate (SCP) Slim Edge Technology
    Vitaliy Fadeyev (University of California,Santa Cruz (US))
    15/11/2013, 10:50
    We are pursuing a “slim edge” technology which allows a drastic reduction of inactive region along the perimeter of silicon detectors. Such reduction would benefit construction of large-area tracker and imaging systems. Key components of this method are surface scribing, cleaving, and passivation of the resulting sidewall. We will give a short overview of the project and describe recent...
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  40. 24. Irradiated n-in-p planar pixel sensors of different thicknesses and active edge designs
    Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
    15/11/2013, 11:10
    We present results of the characterization of n-in-p planar pixel modules employing 100 and 200 µm thin sensors with active edges produced at VTT, Finland, and 150 µm thin sensors produced at MPP/HLL. These are interconnected with bump bonding to either FE-I3 or FE-I4 ATLAS read-out chips and irradiated up to a fluence of 1e16. A comparison of the performance of the different sensor...
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  41. 43. Proposal for a production of thin active edge diodes and pixels
    Anna Macchiolo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)
    15/11/2013, 11:30
  42. 13. Future sensor-chip packaging technologies at CiS
    Tobias Wittig (Technische Universitaet Dortmund (DE))
    15/11/2013, 11:40
    In the past, the CiS research institute has made a mark as a vendor of reliable radiation hard planar silicon sensors for various important HEP detectors. In addition to the sensor production, it is aiming for an extension of the possibilities of in-house sensor-chip packaging. Initial tests of a combination of electroless nickel UBM and solder ball bumping have been started. This batch-wise...
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  43. 42. Active pixel sensors in 180 nm HV CMOS technology for HL-LHC detector upgrades
    Daniel Muenstermann (Universite de Geneve (CH))
    15/11/2013, 12:00
    Standard (20 min including discussion)
    3D detectors and slim edges
    Recently, certain CMOS processes featuring the option to apply significant bias voltages have shown the potential for producing drift-based radiation-hard tracking detectors. We explore the concept of using a deep-submicron HV CMOS process to produce a drop-in replacement for traditional radiation-hard silicon sensors. Such active sensors contain simple circuits, e.g. amplifiers and...
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  44. 44. Preliminary irradiation studies of ultra thin 3D detectors
    Giulio Pellegrini (Universidad de Valencia (ES)), Dr Virginia Greco (CNM-IMB-CSIC)
    15/11/2013, 12:20
    Standard (20 min including discussion)
    3D detectors and slim edges
    We will show the first results of 3D ultra thin silicon detectors irradiated with neutrons at 10E16cm-2 1MeV eq. The detectors were tested at room and low temperature with alpha particles.
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  45. 37. Discussion Session on New structures (3D, slim and active edges, ...)
    Giulio Pellegrini (Universidad de Valencia (ES)), Giulio Pellegrini (Universidad de Valencia (ES))
    15/11/2013, 12:40