23rd RD50 Workshop (CERN)

Irradiated n-in-p planar pixel sensors of different thicknesses and active edge designs

15 Nov 2013, 11:10

20m

CERN

3D detectors and slim edges

Speaker

Stefano Terzo (Max-Planck-Institut fuer Physik (Werner-Heisenberg-Institut) (D)

Description

We present results of the characterization of n-in-p planar pixel modules employing 100 and 200 µm thin sensors with active edges produced at VTT, Finland, and 150 µm thin sensors produced at MPP/HLL. These are interconnected with bump bonding to either FE-I3 or FE-I4 ATLAS read-out chips and irradiated up to a fluence of 1e16. A comparison of the performance of the different sensor thicknesses and studies of the edge properties for the VTT sensors have been performed with radioactive sources in the laboratory and using precise beam test measurements with 120 GeV pions at CERN SpS and 4 GeV electrons at DESY, Hamburg.

Presentation materials

Slides

2013_Nov_RD50_Workshop.pdf